Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers

T. Paskova*, J. Birch, S. Tungasmita, R. Beccard, M. Heuken, E. B. Svedberg, P. Runesson, E. M. Goldys, B. Monemar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

We report a comparative study of the crystalline quality of thick GaN layers grown by hydride vapour phase epitaxy, using a nitridation and a GaCl pretreatment of the sapphire as well as a reactive sputtered AlN buffer and metalorganic chemical vapour deposition grown GaN `template' layers. The structure quality was investigated using X-ray diffraction measurement and cathodoluminescence spectroscopy and imaging of cross-section of the films. The morphology of the layers was revealed by optical and atomic force microscopy. A distinct reduction of both the columnar near-interface region and the domain formation were observed in layers grown on AlN and GaN `template' buffers resulting in improved bulk quality and significant smoother film surfaces.

Original languageEnglish
Pages (from-to)415-419
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume176
Issue number1
DOIs
Publication statusPublished - Nov 1999

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