Thin films of wide bandgap II-VI compounds grown by atomic layer epitaxy - Properties and application

M. Godlewski*, A. Szczerbakow, M. M. Godlewski

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    Thin films of ZnS, SrS and CaS, grown by atomic layer epitaxy (ALE) and doped with various transition metal and/or rare earth ions, are used in commercialized new generation of the thin film electroluminescence (TFEL) devices. ALE growth technique and its application to the growth of the TFEL devices will first be shortly described. Competing approaches to get bright blue, green and red color light emission will be reviewed. Then, new experimental results obtained by us for the ALE-grown thin films of ZnSe will be presented. The origin of the bright white color emission from these films will be explained.

    Original languageEnglish
    Pages (from-to)75-82
    Number of pages8
    JournalJournal of Wide Bandgap Materials
    Volume9
    Issue number1-2
    DOIs
    Publication statusPublished - 2001

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