Thin films of wide bandgap II-VI compounds grown by atomic layer epitaxy - Properties and application

M. Godlewski*, A. Szczerbakow, M. M. Godlewski

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Thin films of ZnS, SrS and CaS, grown by atomic layer epitaxy (ALE) and doped with various transition metal and/or rare earth ions, are used in commercialized new generation of the thin film electroluminescence (TFEL) devices. ALE growth technique and its application to the growth of the TFEL devices will first be shortly described. Competing approaches to get bright blue, green and red color light emission will be reviewed. Then, new experimental results obtained by us for the ALE-grown thin films of ZnSe will be presented. The origin of the bright white color emission from these films will be explained.

Original languageEnglish
Pages (from-to)75-82
Number of pages8
JournalJournal of Wide Bandgap Materials
Volume9
Issue number1-2
DOIs
Publication statusPublished - 2001

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