Three-stage pulse measurement technique for characterization of charge trapping in FETs

Sayed Ali Albahrani, Anthony Parker, Michael Heimlich

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

2 Citations (Scopus)

Abstract

A difficulty concerning characterization of charge trapping in microwave FETs by performing pulse measurements is the possible overlap between the trapping and self-heating rates. Another difficulty is that the potential introduced by charge trapping modulates the drain-source current differently at bias points with different values of drain-source conductance, gm, and drain transconductance, gd. Measurement of true-DC values for gm and gd at all bias points will then be required for estimating the potential introduced by charge trapping. For devices such as GaN HEMTs, true-DC values for gm and gd at each bias point can be obtained only after thousands or tens of thousands of seconds after pulsing the device. A new pulse-measurement technique is proposed that overcomes these difficulties. The results of measurements performed on a GaN HEMT using the proposed pulse-measurement technique is presented, and the observed trapping behavior is characterized.

Original languageEnglish
Title of host publicationAMS 2016 - 2016 2nd Australian Microwave Symposium, Conference Proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages13-14
Number of pages2
ISBN (Electronic)9781509004294
ISBN (Print)9781509004300
DOIs
Publication statusPublished - 18 Oct 2016
Event2nd Australian Microwave Symposium, AMS 2016 - Adelaide, Australia
Duration: 11 Feb 201612 Feb 2016

Other

Other2nd Australian Microwave Symposium, AMS 2016
CountryAustralia
CityAdelaide
Period11/02/1612/02/16

Keywords

  • Charge trapping
  • GaN HEMT
  • microwave FET
  • semiconductor device measurement

Fingerprint Dive into the research topics of 'Three-stage pulse measurement technique for characterization of charge trapping in FETs'. Together they form a unique fingerprint.

Cite this