Time-varying low-frequency noise in InGaP/GaAs HBTs

Oya Sevimli; Anthony E. Parker; Simon J. Mahon; Anthony P. Fattorini

doi:10.1109/ICNF.2013.6578956

Time-varying low-frequency noise in InGaP/GaAs HBTs

Oya Sevimli, Anthony E. Parker, Simon J. Mahon, Anthony P. Fattorini

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral density measurements are repeated in regular intervals and plotted in 3-D to reveal variations both in frequency and time. The low-frequency noise models obtained from the frequency-domain noise measurements are used for predicting phase noise but, as the instantaneous values are not preserved in frequency-domain averaging, they have limited validity.

Original language	English
Title of host publication	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781479906710, 9781479906703
ISBN (Print)	9781479906680
DOIs	https://doi.org/10.1109/ICNF.2013.6578956
Publication status	Published - 2013
Event	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 - Montpellier, France Duration: 24 Jun 2013 → 28 Jun 2013

Other

Other	2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Country/Territory	France
City	Montpellier
Period	24/06/13 → 28/06/13

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10.1109/ICNF.2013.6578956

Cite this

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title = "Time-varying low-frequency noise in InGaP/GaAs HBTs",

abstract = "Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral density measurements are repeated in regular intervals and plotted in 3-D to reveal variations both in frequency and time. The low-frequency noise models obtained from the frequency-domain noise measurements are used for predicting phase noise but, as the instantaneous values are not preserved in frequency-domain averaging, they have limited validity.",

author = "Oya Sevimli and Parker, {Anthony E.} and Mahon, {Simon J.} and Fattorini, {Anthony P.}",

year = "2013",

doi = "10.1109/ICNF.2013.6578956",

language = "English",

isbn = "9781479906680",

pages = "1--4",

booktitle = "2013 22nd International Conference on Noise and Fluctuations, ICNF 2013",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 ; Conference date: 24-06-2013 Through 28-06-2013",

}

Sevimli, O, Parker, AE, Mahon, SJ & Fattorini, AP 2013, Time-varying low-frequency noise in InGaP/GaAs HBTs. in 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013., 6578956, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013, Montpellier, France, 24/06/13. https://doi.org/10.1109/ICNF.2013.6578956

Time-varying low-frequency noise in InGaP/GaAs HBTs. / Sevimli, Oya; Parker, Anthony E.; Mahon, Simon J. et al.
2013 22nd International Conference on Noise and Fluctuations, ICNF 2013. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 1-4 6578956.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Mahon, Simon J.

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N2 - Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral density measurements are repeated in regular intervals and plotted in 3-D to reveal variations both in frequency and time. The low-frequency noise models obtained from the frequency-domain noise measurements are used for predicting phase noise but, as the instantaneous values are not preserved in frequency-domain averaging, they have limited validity.

AB - Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral density measurements are repeated in regular intervals and plotted in 3-D to reveal variations both in frequency and time. The low-frequency noise models obtained from the frequency-domain noise measurements are used for predicting phase noise but, as the instantaneous values are not preserved in frequency-domain averaging, they have limited validity.

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DO - 10.1109/ICNF.2013.6578956

M3 - Conference proceeding contribution

AN - SCOPUS:84883716694

SN - 9781479906680

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BT - 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013

PB - Institute of Electrical and Electronics Engineers (IEEE)

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T2 - 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013

Y2 - 24 June 2013 through 28 June 2013

ER -

Time-varying low-frequency noise in InGaP/GaAs HBTs

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