Time-varying low-frequency noise in InGaP/GaAs HBTs

Oya Sevimli, Anthony E. Parker, Simon J. Mahon, Anthony P. Fattorini

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

Time-varying low-frequency noise is observed in InGaP/GaAs heterojunction bipolar transistors from two different foundries. Frequency-domain noise spectral density measurements are repeated in regular intervals and plotted in 3-D to reveal variations both in frequency and time. The low-frequency noise models obtained from the frequency-domain noise measurements are used for predicting phase noise but, as the instantaneous values are not preserved in frequency-domain averaging, they have limited validity.

Original languageEnglish
Title of host publication2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781479906710, 9781479906703
ISBN (Print)9781479906680
DOIs
Publication statusPublished - 2013
Event2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 - Montpellier, France
Duration: 24 Jun 201328 Jun 2013

Other

Other2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
CountryFrance
CityMontpellier
Period24/06/1328/06/13

Fingerprint Dive into the research topics of 'Time-varying low-frequency noise in InGaP/GaAs HBTs'. Together they form a unique fingerprint.

Cite this