Total absorption in structured ultrathin semiconductor layers

C. Martijn de Sterke; Bjorn C. Sturmberg; Ross C. McPhedran; Teck K. Chong; Duk Yong Choi; Thomas P. White; Lindsay C. Botten; Kylie R. Catchpole; Kokou B. Dossou; Christopher G. Poulton

doi:10.1364/PV.2016.PTh2A.1

Total absorption in structured ultrathin semiconductor layers

C. Martijn de Sterke, Bjorn C. Sturmberg, Ross C. McPhedran, Teck K. Chong, Duk Yong Choi, Thomas P. White, Lindsay C. Botten, Kylie R. Catchpole, Kokou B. Dossou, Christopher G. Poulton

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

Abstract

We show that essentially total absorption can be achieved in ultrathin layers of a modestly absorbing semiconductor using a grating geometry. Fabrication requires standard techniques and structured metal elements are not required.

Original language	English
Title of host publication	Optical Nanostructures and Advanced Materials for Photovoltaics 2016
Subtitle of host publication	Conference proceedings
Publisher	OSA - The Optical Society
Pages	1-3
Number of pages	3
ISBN (Print)	9780960038046
DOIs	https://doi.org/10.1364/PV.2016.PTh2A.1
Publication status	Published - 21 Jul 2014
Externally published	Yes
Event	Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016 - Leipzig, Germany Duration: 14 Nov 2016 → 17 Nov 2016

Other

Other	Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016
Country/Territory	Germany
City	Leipzig
Period	14/11/16 → 17/11/16

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10.1364/PV.2016.PTh2A.1

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Martijn de Sterke, C., Sturmberg, B. C., McPhedran, R. C., Chong, T. K., Choi, D. Y., White, T. P., Botten, L. C., Catchpole, K. R., Dossou, K. B., & Poulton, C. G. (2014). Total absorption in structured ultrathin semiconductor layers. In Optical Nanostructures and Advanced Materials for Photovoltaics 2016: Conference proceedings (pp. 1-3). Article PTh2A OSA - The Optical Society. https://doi.org/10.1364/PV.2016.PTh2A.1

@inproceedings{8a5a0301e5de48bfb3057eff33035369,

title = "Total absorption in structured ultrathin semiconductor layers",

abstract = "We show that essentially total absorption can be achieved in ultrathin layers of a modestly absorbing semiconductor using a grating geometry. Fabrication requires standard techniques and structured metal elements are not required.",

author = "{Martijn de Sterke}, C. and Sturmberg, {Bjorn C.} and McPhedran, {Ross C.} and Chong, {Teck K.} and Choi, {Duk Yong} and White, {Thomas P.} and Botten, {Lindsay C.} and Catchpole, {Kylie R.} and Dossou, {Kokou B.} and Poulton, {Christopher G.}",

year = "2014",

month = jul,

day = "21",

doi = "10.1364/PV.2016.PTh2A.1",

language = "English",

isbn = "9780960038046",

pages = "1--3",

booktitle = "Optical Nanostructures and Advanced Materials for Photovoltaics 2016",

publisher = "OSA - The Optical Society",

note = "Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016 ; Conference date: 14-11-2016 Through 17-11-2016",

}

Martijn de Sterke, C, Sturmberg, BC, McPhedran, RC, Chong, TK, Choi, DY, White, TP, Botten, LC, Catchpole, KR, Dossou, KB & Poulton, CG 2014, Total absorption in structured ultrathin semiconductor layers. in Optical Nanostructures and Advanced Materials for Photovoltaics 2016: Conference proceedings., PTh2A, OSA - The Optical Society, pp. 1-3, Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016, Leipzig, Germany, 14/11/16. https://doi.org/10.1364/PV.2016.PTh2A.1

Total absorption in structured ultrathin semiconductor layers. / Martijn de Sterke, C.; Sturmberg, Bjorn C.; McPhedran, Ross C. et al.
Optical Nanostructures and Advanced Materials for Photovoltaics 2016: Conference proceedings. OSA - The Optical Society, 2014. p. 1-3 PTh2A.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Total absorption in structured ultrathin semiconductor layers

AU - Martijn de Sterke, C.

AU - Sturmberg, Bjorn C.

AU - McPhedran, Ross C.

AU - Chong, Teck K.

AU - Choi, Duk Yong

AU - White, Thomas P.

AU - Botten, Lindsay C.

AU - Catchpole, Kylie R.

AU - Dossou, Kokou B.

AU - Poulton, Christopher G.

PY - 2014/7/21

Y1 - 2014/7/21

N2 - We show that essentially total absorption can be achieved in ultrathin layers of a modestly absorbing semiconductor using a grating geometry. Fabrication requires standard techniques and structured metal elements are not required.

AB - We show that essentially total absorption can be achieved in ultrathin layers of a modestly absorbing semiconductor using a grating geometry. Fabrication requires standard techniques and structured metal elements are not required.

UR - http://www.scopus.com/inward/record.url?scp=85019517237&partnerID=8YFLogxK

U2 - 10.1364/PV.2016.PTh2A.1

DO - 10.1364/PV.2016.PTh2A.1

M3 - Conference proceeding contribution

AN - SCOPUS:85019517237

SN - 9780960038046

SP - 1

EP - 3

BT - Optical Nanostructures and Advanced Materials for Photovoltaics 2016

PB - OSA - The Optical Society

T2 - Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2016

Y2 - 14 November 2016 through 17 November 2016

ER -

Total absorption in structured ultrathin semiconductor layers

Abstract

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