Transformer balun design in Gallium Arsenide and Silicon Germanium processes

Sudipta Chakraborty; Leigh E. Milner; Anthony Parker; Michael Heimlich

doi:10.1109/AUSMS.2018.8346963

Transformer balun design in Gallium Arsenide and Silicon Germanium processes

Sudipta Chakraborty^*, Leigh E. Milner, Anthony Parker, Michael Heimlich

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

The design of two transformer baluns is presented using different process technologies. Gallium Arsenside (GaAs) has been widely used for microwave circuits over the past few decades for its high performance. Silicon Germanium (SiGe) is an emerging technology that offers performance similar to GaAs and digital circuit integration. The differences between the metal and insulator layers are presented in the context of the balun design and its requirement for tight coupling between primary and secondary coils. A comparable performance was achieved between the two processes using electromagnetic simulation. The magnitude and phase imbalances were (0.05 dB, 0.5^o) for GaAs and (0.05 dB, 0.2^o) for SiGe between 10 and 20 GHz.

Original language	English
Title of host publication	2018 Australian Microwave Symposium (AMS)
Subtitle of host publication	6th - 7th February, 2018, Brisbane, Australia: conference proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	23-24
Number of pages	2
ISBN (Electronic)	9781538625682, 9781538625675
ISBN (Print)	9781538625699
DOIs	https://doi.org/10.1109/AUSMS.2018.8346963
Publication status	Published - 2018
Event	2018 Australian Microwave Symposium, AMS 2018 - Brisbane, Australia Duration: 6 Feb 2018 → 7 Feb 2018

Conference

Conference	2018 Australian Microwave Symposium, AMS 2018
Country/Territory	Australia
City	Brisbane
Period	6/02/18 → 7/02/18

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10.1109/AUSMS.2018.8346963

Cite this

Chakraborty, S., Milner, L. E., Parker, A., & Heimlich, M. (2018). Transformer balun design in Gallium Arsenide and Silicon Germanium processes. In 2018 Australian Microwave Symposium (AMS): 6th - 7th February, 2018, Brisbane, Australia: conference proceedings (pp. 23-24). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/AUSMS.2018.8346963

@inproceedings{03892edbbcb2458884a242d52a957128,

title = "Transformer balun design in Gallium Arsenide and Silicon Germanium processes",

abstract = "The design of two transformer baluns is presented using different process technologies. Gallium Arsenside (GaAs) has been widely used for microwave circuits over the past few decades for its high performance. Silicon Germanium (SiGe) is an emerging technology that offers performance similar to GaAs and digital circuit integration. The differences between the metal and insulator layers are presented in the context of the balun design and its requirement for tight coupling between primary and secondary coils. A comparable performance was achieved between the two processes using electromagnetic simulation. The magnitude and phase imbalances were (0.05 dB, 0.5o) for GaAs and (0.05 dB, 0.2o) for SiGe between 10 and 20 GHz.",

author = "Sudipta Chakraborty and Milner, {Leigh E.} and Anthony Parker and Michael Heimlich",

year = "2018",

doi = "10.1109/AUSMS.2018.8346963",

language = "English",

isbn = "9781538625699",

pages = "23--24",

booktitle = "2018 Australian Microwave Symposium (AMS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2018 Australian Microwave Symposium, AMS 2018 ; Conference date: 06-02-2018 Through 07-02-2018",

}

Chakraborty, S , Milner, LE, Parker, A & Heimlich, M 2018, Transformer balun design in Gallium Arsenide and Silicon Germanium processes. in 2018 Australian Microwave Symposium (AMS): 6th - 7th February, 2018, Brisbane, Australia: conference proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 23-24, 2018 Australian Microwave Symposium, AMS 2018, Brisbane, Australia, 6/02/18. https://doi.org/10.1109/AUSMS.2018.8346963

Transformer balun design in Gallium Arsenide and Silicon Germanium processes. / Chakraborty, Sudipta ; Milner, Leigh E.; Parker, Anthony et al.

2018 Australian Microwave Symposium (AMS): 6th - 7th February, 2018, Brisbane, Australia: conference proceedings. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 23-24.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Transformer balun design in Gallium Arsenide and Silicon Germanium processes

AU - Chakraborty, Sudipta

AU - Milner, Leigh E.

AU - Parker, Anthony

AU - Heimlich, Michael

PY - 2018

Y1 - 2018

N2 - The design of two transformer baluns is presented using different process technologies. Gallium Arsenside (GaAs) has been widely used for microwave circuits over the past few decades for its high performance. Silicon Germanium (SiGe) is an emerging technology that offers performance similar to GaAs and digital circuit integration. The differences between the metal and insulator layers are presented in the context of the balun design and its requirement for tight coupling between primary and secondary coils. A comparable performance was achieved between the two processes using electromagnetic simulation. The magnitude and phase imbalances were (0.05 dB, 0.5o) for GaAs and (0.05 dB, 0.2o) for SiGe between 10 and 20 GHz.

AB - The design of two transformer baluns is presented using different process technologies. Gallium Arsenside (GaAs) has been widely used for microwave circuits over the past few decades for its high performance. Silicon Germanium (SiGe) is an emerging technology that offers performance similar to GaAs and digital circuit integration. The differences between the metal and insulator layers are presented in the context of the balun design and its requirement for tight coupling between primary and secondary coils. A comparable performance was achieved between the two processes using electromagnetic simulation. The magnitude and phase imbalances were (0.05 dB, 0.5o) for GaAs and (0.05 dB, 0.2o) for SiGe between 10 and 20 GHz.

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UR - http://purl.org/au-research/grants/arc/LP130100734

U2 - 10.1109/AUSMS.2018.8346963

DO - 10.1109/AUSMS.2018.8346963

M3 - Conference proceeding contribution

AN - SCOPUS:85049727693

SN - 9781538625699

SP - 23

EP - 24

BT - 2018 Australian Microwave Symposium (AMS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2018 Australian Microwave Symposium, AMS 2018

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ER -

Chakraborty S , Milner LE, Parker A, Heimlich M. Transformer balun design in Gallium Arsenide and Silicon Germanium processes. In 2018 Australian Microwave Symposium (AMS): 6th - 7th February, 2018, Brisbane, Australia: conference proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2018. p. 23-24 https://doi.org/10.1109/AUSMS.2018.8346963

Transformer balun design in Gallium Arsenide and Silicon Germanium processes

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