Transformer balun design in Gallium Arsenide and Silicon Germanium processes

Sudipta Chakraborty*, Leigh E. Milner, Anthony Parker, Michael Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

The design of two transformer baluns is presented using different process technologies. Gallium Arsenside (GaAs) has been widely used for microwave circuits over the past few decades for its high performance. Silicon Germanium (SiGe) is an emerging technology that offers performance similar to GaAs and digital circuit integration. The differences between the metal and insulator layers are presented in the context of the balun design and its requirement for tight coupling between primary and secondary coils. A comparable performance was achieved between the two processes using electromagnetic simulation. The magnitude and phase imbalances were (0.05 dB, 0.5o) for GaAs and (0.05 dB, 0.2o) for SiGe between 10 and 20 GHz.

Original languageEnglish
Title of host publication2018 Australian Microwave Symposium (AMS)
Subtitle of host publication6th - 7th February, 2018, Brisbane, Australia: conference proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages23-24
Number of pages2
ISBN (Electronic)9781538625682, 9781538625675
ISBN (Print)9781538625699
DOIs
Publication statusPublished - 2018
Event2018 Australian Microwave Symposium, AMS 2018 - Brisbane, Australia
Duration: 6 Feb 20187 Feb 2018

Conference

Conference2018 Australian Microwave Symposium, AMS 2018
CountryAustralia
CityBrisbane
Period6/02/187/02/18

Fingerprint Dive into the research topics of 'Transformer balun design in Gallium Arsenide and Silicon Germanium processes'. Together they form a unique fingerprint.

Cite this