Transient field-plate thermometry in cascode FET power amplifiers

David J. Niven; Simon J. Mahon; Andrew J. Jones; Melissa C. Gorman

doi:10.1109/BCICTS54660.2023.10310968

Transient field-plate thermometry in cascode FET power amplifiers

David J. Niven, Simon J. Mahon, Andrew J. Jones, Melissa C. Gorman

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

1 Citation (Scopus)

Abstract

Transient field-plate thermometry is demonstrated on cascode FET S-band and X-band GaN power amplifiers. Mesa thermometry is also demonstrated on the same amplifiers and compared to the field-plate data. A transient thermal model is proposed for both field-plate and mesa thermometry that agrees well with measured data. This is the first published study of thermal transients in cascode (stacked-FET) power amplifiers.

Original language	English
Title of host publication	2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	82-85
Number of pages	4
ISBN (Electronic)	9798350307641
ISBN (Print)	9798350307658
DOIs	https://doi.org/10.1109/BCICTS54660.2023.10310968
Publication status	Published - 2023
Event	2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023 - Monterey, United States Duration: 16 Oct 2023 → 18 Oct 2023

Publication series

Name
ISSN (Print)	2831-4972
ISSN (Electronic)	2831-4999

Conference

Conference	2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023
Country/Territory	United States
City	Monterey
Period	16/10/23 → 18/10/23

Keywords

Gallium nitride
cascode
stacked-FET
MMICs
transient thermal measurements

Access to Document

10.1109/BCICTS54660.2023.10310968

Cite this

@inproceedings{15f1a9be7ac946a4bec3a6986f5b3422,

title = "Transient field-plate thermometry in cascode FET power amplifiers",

abstract = "Transient field-plate thermometry is demonstrated on cascode FET S-band and X-band GaN power amplifiers. Mesa thermometry is also demonstrated on the same amplifiers and compared to the field-plate data. A transient thermal model is proposed for both field-plate and mesa thermometry that agrees well with measured data. This is the first published study of thermal transients in cascode (stacked-FET) power amplifiers.",

keywords = "Gallium nitride, cascode, stacked-FET, MMICs, transient thermal measurements",

author = "Niven, \{David J.\} and Mahon, \{Simon J.\} and Jones, \{Andrew J.\} and Gorman, \{Melissa C.\}",

year = "2023",

doi = "10.1109/BCICTS54660.2023.10310968",

language = "English",

isbn = "9798350307658",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "82--85",

booktitle = "2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)",

address = "United States",

note = "2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023 ; Conference date: 16-10-2023 Through 18-10-2023",

}

Niven, DJ , Mahon, SJ, Jones, AJ & Gorman, MC 2023, Transient field-plate thermometry in cascode FET power amplifiers. in 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 82-85, 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, United States, 16/10/23. https://doi.org/10.1109/BCICTS54660.2023.10310968

Transient field-plate thermometry in cascode FET power amplifiers. / Niven, David J.; Mahon, Simon J.; Jones, Andrew J. et al.
2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2023. p. 82-85.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Transient field-plate thermometry in cascode FET power amplifiers

AU - Niven, David J.

AU - Mahon, Simon J.

AU - Jones, Andrew J.

AU - Gorman, Melissa C.

PY - 2023

Y1 - 2023

N2 - Transient field-plate thermometry is demonstrated on cascode FET S-band and X-band GaN power amplifiers. Mesa thermometry is also demonstrated on the same amplifiers and compared to the field-plate data. A transient thermal model is proposed for both field-plate and mesa thermometry that agrees well with measured data. This is the first published study of thermal transients in cascode (stacked-FET) power amplifiers.

AB - Transient field-plate thermometry is demonstrated on cascode FET S-band and X-band GaN power amplifiers. Mesa thermometry is also demonstrated on the same amplifiers and compared to the field-plate data. A transient thermal model is proposed for both field-plate and mesa thermometry that agrees well with measured data. This is the first published study of thermal transients in cascode (stacked-FET) power amplifiers.

KW - Gallium nitride

KW - cascode

KW - stacked-FET

KW - MMICs

KW - transient thermal measurements

UR - https://www.scopus.com/pages/publications/85179524344

U2 - 10.1109/BCICTS54660.2023.10310968

DO - 10.1109/BCICTS54660.2023.10310968

M3 - Conference proceeding contribution

AN - SCOPUS:85179524344

SN - 9798350307658

SP - 82

EP - 85

BT - 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023

Y2 - 16 October 2023 through 18 October 2023

ER -

Transient field-plate thermometry in cascode FET power amplifiers

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Keywords

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