Transient gate resistance thermometry demonstrated on GaAs and GaN FET

Bryan K. Schwitter, Tony Parker, Simon J. Mahon, Michael C. Heimlich

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

12 Citations (Scopus)

Abstract

The development of transient gate resistance thermometry (T-GRT) is reported. It is a technique used to measure the transient self-heating of a FET's gate metal. Demonstrations of T-GRT are presented at the wafer level on a GaAs pHEMT and an AlGaN/GaN-on-SiC HEMT. Dynamic self heating is monitored from hundreds of nanoseconds to hundreds of milliseconds. Preliminary finite-element simulations across a range of power dissipation levels agree closely with T-GRT at, and beyond, 1 μs after the applied drain pulse. Characterization of dynamic self heating and its application to pulsed applications such as radar are discussed.

Original languageEnglish
Title of host publication2016 IEEE MTT-S International Microwave Symposium, IMS 2016
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781509006984
DOIs
Publication statusPublished - 9 Aug 2016
EventIEEE MTT-S International Microwave Symposium (IMS) - San Francisco, United States
Duration: 22 May 201627 May 2016

Publication series

NameIEEE MTT-S International Microwave Symposium
PublisherIEEE
ISSN (Print)0149-645X

Conference

ConferenceIEEE MTT-S International Microwave Symposium (IMS)
CountryUnited States
CitySan Francisco
Period22/05/1627/05/16

Keywords

  • Gallium nitride
  • gallum arsenide
  • HEMTs
  • MMICs
  • temperature measurement
  • transient thermal analysis
  • JUNCTION TEMPERATURE

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