@inproceedings{f1174b65ae9546ad871b2734b92288c0,
title = "Transient gate resistance thermometry demonstrated on GaAs and GaN FET",
abstract = "The development of transient gate resistance thermometry (T-GRT) is reported. It is a technique used to measure the transient self-heating of a FET's gate metal. Demonstrations of T-GRT are presented at the wafer level on a GaAs pHEMT and an AlGaN/GaN-on-SiC HEMT. Dynamic self heating is monitored from hundreds of nanoseconds to hundreds of milliseconds. Preliminary finite-element simulations across a range of power dissipation levels agree closely with T-GRT at, and beyond, 1 μs after the applied drain pulse. Characterization of dynamic self heating and its application to pulsed applications such as radar are discussed.",
keywords = "Gallium nitride, gallum arsenide, HEMTs, MMICs, temperature measurement, transient thermal analysis, JUNCTION TEMPERATURE",
author = "Schwitter, \{Bryan K.\} and Tony Parker and Mahon, \{Simon J.\} and Heimlich, \{Michael C.\}",
year = "2016",
month = aug,
day = "9",
doi = "10.1109/MWSYM.2016.7540035",
language = "English",
series = "IEEE MTT-S International Microwave Symposium",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "1--4",
booktitle = "2016 IEEE MTT-S International Microwave Symposium, IMS 2016",
address = "United States",
note = "IEEE MTT-S International Microwave Symposium (IMS) ; Conference date: 22-05-2016 Through 27-05-2016",
}