Transistor array or power amplifier with inbuilt thermal sensor

Michael Heimlich; Simon Mahon; Anthony Parker

Transistor array or power amplifier with inbuilt thermal sensor

Michael Heimlich (Inventor), Simon Mahon (Inventor), Anthony Parker (Inventor)

Research output: Patent

Abstract

A power amplifier or other circuit with power transistors is disclosed, which includes structure for a thermal sensor. A metal structure is disposed proximate to heat generating transistors. The metal structure may be disposed between two transistors outside of the area occupied by the transistors. The metal structure may correspond to a gate of a field effect transistor or to a connector of a bipolar junction transistor. Operation of the power amplifier may be controlled based on a signal from the thermal sensor.

Original language	English
Patent number	WO2021159177
IPC	H03F 1/30 2006.1,H03K 17/14 2006.1,H03K 19/003 2006.1,H03K 17/08 2006.1,H01L 23/24 2006.1,H01L 27/02 2006.1
Priority date	14/02/20
Filing date	10/02/21
Publication status	Submitted - 19 Aug 2021

Bibliographical note

Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, IT, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, WS, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)

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title = "Transistor array or power amplifier with inbuilt thermal sensor",

abstract = "A power amplifier or other circuit with power transistors is disclosed, which includes structure for a thermal sensor. A metal structure is disposed proximate to heat generating transistors. The metal structure may be disposed between two transistors outside of the area occupied by the transistors. The metal structure may correspond to a gate of a field effect transistor or to a connector of a bipolar junction transistor. Operation of the power amplifier may be controlled based on a signal from the thermal sensor.",

author = "Michael Heimlich and Simon Mahon and Anthony Parker",

note = "Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, IT, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, WS, ZA, ZM, ZW African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW) Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM) European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR) African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG); WO2021159177; H03F 1/30 2006.1,H03K 17/14 2006.1,H03K 19/003 2006.1,H03K 17/08 2006.1,H01L 23/24 2006.1,H01L 27/02 2006.1",

year = "2021",

month = aug,

day = "19",

language = "English",

type = "Patent",

}

TY - PAT

T1 - Transistor array or power amplifier with inbuilt thermal sensor

AU - Heimlich, Michael

AU - Mahon, Simon

AU - Parker, Anthony

N1 - Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, IT, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, WS, ZA, ZM, ZW African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW) Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM) European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR) African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)

PY - 2021/8/19

Y1 - 2021/8/19

N2 - A power amplifier or other circuit with power transistors is disclosed, which includes structure for a thermal sensor. A metal structure is disposed proximate to heat generating transistors. The metal structure may be disposed between two transistors outside of the area occupied by the transistors. The metal structure may correspond to a gate of a field effect transistor or to a connector of a bipolar junction transistor. Operation of the power amplifier may be controlled based on a signal from the thermal sensor.

AB - A power amplifier or other circuit with power transistors is disclosed, which includes structure for a thermal sensor. A metal structure is disposed proximate to heat generating transistors. The metal structure may be disposed between two transistors outside of the area occupied by the transistors. The metal structure may correspond to a gate of a field effect transistor or to a connector of a bipolar junction transistor. Operation of the power amplifier may be controlled based on a signal from the thermal sensor.

M3 - Patent

M1 - WO2021159177

Y2 - 2021/02/10

ER -

Transistor array or power amplifier with inbuilt thermal sensor

Abstract

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