Transistor Low Frequency Noise Modelling for Oscillator Phase Noise Simulation

Oya Sevimli, Anthony Parker, Anthony Fattorini, James Harvey, Simon Mahon

Research output: Contribution to conferenceAbstract

Abstract

We have measured low frequency s-parameters of GaAs HBTs on wafer and found the dispersion could be modelled with a simple modification to the foundry provided standard nonlinear HBT model [4]. This model with correct dispersion behaviour could then be used for extracting the low frequency noise parameters. We have been experimenting with one port and two port low frequency noise measurements and the calibration of the on-wafer noise measurement. We will report on the low frequency noise measurements and modelling of the GaAs HBTs suitable for VCO phase noise simulation.
Original languageEnglish
Pages27-27
Number of pages1
Publication statusPublished - 2010
EventWARS 2010 Workshop on Applications of Radio Science - Canberra, Australia
Duration: 11 Feb 201012 Feb 2010

Workshop

WorkshopWARS 2010 Workshop on Applications of Radio Science
CityCanberra, Australia
Period11/02/1012/02/10

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Keywords

  • transistor noise

Cite this

Sevimli, O., Parker, A., Fattorini, A., Harvey, J., & Mahon, S. (2010). Transistor Low Frequency Noise Modelling for Oscillator Phase Noise Simulation. 27-27. Abstract from WARS 2010 Workshop on Applications of Radio Science, Canberra, Australia, .