We have measured low frequency s-parameters of GaAs HBTs on wafer and found the dispersion could be modelled with a simple modification to the foundry provided standard nonlinear HBT model . This model with correct dispersion behaviour could then be used for extracting the low frequency noise parameters. We have been experimenting with one port and two port low frequency noise measurements and the calibration of the on-wafer noise measurement. We will report on the low frequency noise measurements and modelling of the GaAs HBTs suitable for VCO phase noise simulation.
|Number of pages||1|
|Publication status||Published - 2010|
|Event||WARS 2010 Workshop on Applications of Radio Science - Canberra, Australia|
Duration: 11 Feb 2010 → 12 Feb 2010
|Workshop||WARS 2010 Workshop on Applications of Radio Science|
|Period||11/02/10 → 12/02/10|
- transistor noise