Transistor Low Frequency Noise Modelling for Oscillator Phase Noise Simulation

Oya Sevimli; Anthony Parker; Anthony Fattorini; James Harvey; Simon Mahon

Transistor Low Frequency Noise Modelling for Oscillator Phase Noise Simulation

Oya Sevimli, Anthony Parker, Anthony Fattorini, James Harvey, Simon Mahon

School of Engineering

Research output: Contribution to conference › Abstract

Abstract

We have measured low frequency s-parameters of GaAs HBTs on wafer and found the dispersion could be modelled with a simple modification to the foundry provided standard nonlinear HBT model [4]. This model with correct dispersion behaviour could then be used for extracting the low frequency noise parameters. We have been experimenting with one port and two port low frequency noise measurements and the calibration of the on-wafer noise measurement. We will report on the low frequency noise measurements and modelling of the GaAs HBTs suitable for VCO phase noise simulation.

Original language	English
Pages	27-27
Number of pages	1
Publication status	Published - 2010
Event	WARS 2010 Workshop on Applications of Radio Science - Canberra, Australia Duration: 11 Feb 2010 → 12 Feb 2010

Workshop

Workshop	WARS 2010 Workshop on Applications of Radio Science
City	Canberra, Australia
Period	11/02/10 → 12/02/10

Keywords

transistor noise

Cite this

@conference{438e5fa3c2264be392e35b00c647f641,

title = "Transistor Low Frequency Noise Modelling for Oscillator Phase Noise Simulation",

abstract = "We have measured low frequency s-parameters of GaAs HBTs on wafer and found the dispersion could be modelled with a simple modification to the foundry provided standard nonlinear HBT model [4]. This model with correct dispersion behaviour could then be used for extracting the low frequency noise parameters. We have been experimenting with one port and two port low frequency noise measurements and the calibration of the on-wafer noise measurement. We will report on the low frequency noise measurements and modelling of the GaAs HBTs suitable for VCO phase noise simulation.",

keywords = "transistor noise",

author = "Oya Sevimli and Anthony Parker and Anthony Fattorini and James Harvey and Simon Mahon",

year = "2010",

language = "English",

pages = "27--27",

note = "WARS 2010 Workshop on Applications of Radio Science ; Conference date: 11-02-2010 Through 12-02-2010",

}

TY - CONF

T1 - Transistor Low Frequency Noise Modelling for Oscillator Phase Noise Simulation

AU - Sevimli, Oya

AU - Parker, Anthony

AU - Fattorini, Anthony

AU - Harvey, James

AU - Mahon, Simon

PY - 2010

Y1 - 2010

N2 - We have measured low frequency s-parameters of GaAs HBTs on wafer and found the dispersion could be modelled with a simple modification to the foundry provided standard nonlinear HBT model [4]. This model with correct dispersion behaviour could then be used for extracting the low frequency noise parameters. We have been experimenting with one port and two port low frequency noise measurements and the calibration of the on-wafer noise measurement. We will report on the low frequency noise measurements and modelling of the GaAs HBTs suitable for VCO phase noise simulation.

AB - We have measured low frequency s-parameters of GaAs HBTs on wafer and found the dispersion could be modelled with a simple modification to the foundry provided standard nonlinear HBT model [4]. This model with correct dispersion behaviour could then be used for extracting the low frequency noise parameters. We have been experimenting with one port and two port low frequency noise measurements and the calibration of the on-wafer noise measurement. We will report on the low frequency noise measurements and modelling of the GaAs HBTs suitable for VCO phase noise simulation.

KW - transistor noise

M3 - Abstract

SP - 27

EP - 27

T2 - WARS 2010 Workshop on Applications of Radio Science

Y2 - 11 February 2010 through 12 February 2010

ER -

Transistor Low Frequency Noise Modelling for Oscillator Phase Noise Simulation

Abstract

Workshop

Keywords

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Cite this