Transverse resonance phenomena based low pass filter

Nainu Priya Chaudhari*, Ashwani Kumar, A. K. Verma

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

This paper presents the design of low pass filter by taking into account the transverse resonance phenomena. It is an excellent method for the design of filters with stringent requirements like sharp cutoff frequency and wide rejection bandwidth. Cut off frequencies of the designed low pass filters have been selected 2.5 GHz and 5GHz to cover the most of the wireless communication bands. Sharper LPF can be designed by choosing the transverse resonance near the cut off and wide rejection stop band can be achieved by selecting the transverse resonance around 2 times of cut off. Proposed design method gives both sharper and wide stop band LPF.

Original languageEnglish
Title of host publicationACCT 2012
Subtitle of host publicationProceedings of the 2012 Second International Conference on Advanced Computing & Communication Technologies
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages505-508
Number of pages4
ISBN (Electronic)9780769546407
ISBN (Print)9781467304719
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 2nd International Conference on Advanced Computing and Communication Technologies, ACCT 2012 - Rohtak, Haryana, India
Duration: 7 Jan 20128 Jan 2012

Other

Other2012 2nd International Conference on Advanced Computing and Communication Technologies, ACCT 2012
CountryIndia
CityRohtak, Haryana
Period7/01/128/01/12

Keywords

  • Low Pass Filter
  • Microstrip Filter
  • Transverse resonance Phenomena (TRP)

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  • Cite this

    Chaudhari, N. P., Kumar, A., & Verma, A. K. (2012). Transverse resonance phenomena based low pass filter. In ACCT 2012: Proceedings of the 2012 Second International Conference on Advanced Computing & Communication Technologies (pp. 505-508). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ACCT.2012.117