Trap model for GaN RF HEMT power switch

Aaron Pereira; Sayed Albahrani; Anthony Parker; Michael Heimlich; Neil Weste; Larry Dunleavy; Scott Skidmore

doi:10.1109/ARFTG-2.2013.6737339

Trap model for GaN RF HEMT power switch

Aaron Pereira, Sayed Albahrani, Anthony Parker, Michael Heimlich, Neil Weste, Larry Dunleavy, Scott Skidmore

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

4 Citations (Scopus)

Abstract

RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused R_ON modulation while the traps in the bulk beneath the gate plate caused current collapse. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse due to bulk traps.

Original language	English
Title of host publication	82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-6
Number of pages	6
ISBN (Electronic)	9781479929351
ISBN (Print)	9781479929368
DOIs	https://doi.org/10.1109/ARFTG-2.2013.6737339
Publication status	Published - 2013
Event	82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013 - Columbus, OH, United States Duration: 20 Nov 2013 → 21 Nov 2013

Other

Other	82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013
Country/Territory	United States
City	Columbus, OH
Period	20/11/13 → 21/11/13

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10.1109/ARFTG-2.2013.6737339

Cite this

Pereira, A., Albahrani, S., Parker, A., Heimlich, M., Weste, N., Dunleavy, L., & Skidmore, S. (2013). Trap model for GaN RF HEMT power switch. In 82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013 (pp. 1-6). [6737339] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ARFTG-2.2013.6737339

@inproceedings{4ed9d1b047334f858ce6bd92a9d151d3,

title = "Trap model for GaN RF HEMT power switch",

abstract = "RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused RON modulation while the traps in the bulk beneath the gate plate caused current collapse. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse due to bulk traps.",

author = "Aaron Pereira and Sayed Albahrani and Anthony Parker and Michael Heimlich and Neil Weste and Larry Dunleavy and Scott Skidmore",

year = "2013",

doi = "10.1109/ARFTG-2.2013.6737339",

language = "English",

isbn = "9781479929368",

pages = "1--6",

booktitle = "82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013 ; Conference date: 20-11-2013 Through 21-11-2013",

}

Pereira, A, Albahrani, S, Parker, A, Heimlich, M, Weste, N, Dunleavy, L & Skidmore, S 2013, Trap model for GaN RF HEMT power switch. in 82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013., 6737339, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-6, 82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013, Columbus, OH, United States, 20/11/13. https://doi.org/10.1109/ARFTG-2.2013.6737339

Trap model for GaN RF HEMT power switch. / Pereira, Aaron; Albahrani, Sayed; Parker, Anthony et al.
82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 1-6 6737339.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Trap model for GaN RF HEMT power switch

AU - Pereira, Aaron

AU - Albahrani, Sayed

AU - Parker, Anthony

AU - Heimlich, Michael

AU - Weste, Neil

AU - Dunleavy, Larry

AU - Skidmore, Scott

PY - 2013

Y1 - 2013

N2 - RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused RON modulation while the traps in the bulk beneath the gate plate caused current collapse. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse due to bulk traps.

AB - RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused RON modulation while the traps in the bulk beneath the gate plate caused current collapse. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse due to bulk traps.

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T2 - 82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013

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Pereira A, Albahrani S, Parker A, Heimlich M, Weste N, Dunleavy L et al. Trap model for GaN RF HEMT power switch. In 82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2013. p. 1-6. 6737339 doi: 10.1109/ARFTG-2.2013.6737339

Trap model for GaN RF HEMT power switch

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