Trap model for GaN RF HEMT power switch

Aaron Pereira, Sayed Albahrani, Anthony Parker, Michael Heimlich, Neil Weste, Larry Dunleavy, Scott Skidmore

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

2 Citations (Scopus)

Abstract

RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state quiescent drain bias voltages. At higher switch voltages, the output power was reduced due increase in the ON resistance and collapse of drain current. Traps located on the surface between gate and drain caused RON modulation while the traps in the bulk beneath the gate plate caused current collapse. A power HEMT model incorporating traps was developed and simulations correctly predicted knee walk out due to increase in the ON resistance and current collapse due to bulk traps.

Original languageEnglish
Title of host publication82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-6
Number of pages6
ISBN (Electronic)9781479929351
ISBN (Print)9781479929368
DOIs
Publication statusPublished - 2013
Event82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013 - Columbus, OH, United States
Duration: 20 Nov 201321 Nov 2013

Other

Other82nd ARFTG Microwave Measurement Conference: Characterization, Modeling, and Design of RF and mm-Wave Devices and Circuits, ARFTG 2013
CountryUnited States
CityColumbus, OH
Period20/11/1321/11/13

Fingerprint Dive into the research topics of 'Trap model for GaN RF HEMT power switch'. Together they form a unique fingerprint.

Cite this