Various III-V semiconductor field effect transistor (FET) characterisation techniques and capabilities are reviewed in the context of the measured information that is required to extract model parameters. Pulsed I-V measurements obtained from a new system contain more information than conventional techniques. The additional information reveals shortcomings in small-signal and d.c. techniques, which have been developed for models that do not describe device behaviour fully. Fast, large-signal information obtained from pulse measurements is considered to be necessary to characterise devices with full models. Requirements and advantages of future systems are discussed.
|Number of pages
|Journal of Electrical and Electronics Engineering, Australia
|Published - Sept 1994