Abstract
Various III-V semiconductor field effect transistor (FET) characterisation techniques and capabilities are reviewed in the context of the measured information that is required to extract model parameters. Pulsed I-V measurements obtained from a new system contain more information than conventional techniques. The additional information reveals shortcomings in small-signal and d.c. techniques, which have been developed for models that do not describe device behaviour fully. Fast, large-signal information obtained from pulse measurements is considered to be necessary to characterise devices with full models. Requirements and advantages of future systems are discussed.
Original language | English |
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Pages (from-to) | 196-205 |
Number of pages | 10 |
Journal | Journal of Electrical and Electronics Engineering, Australia |
Volume | 14 |
Issue number | 3 |
Publication status | Published - Sept 1994 |
Externally published | Yes |