Trends in device characterisation

a pulsed semiconductor parameter analyser system for III-V FETs

J. Scott*, A. Parker

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Various III-V semiconductor field effect transistor (FET) characterisation techniques and capabilities are reviewed in the context of the measured information that is required to extract model parameters. Pulsed I-V measurements obtained from a new system contain more information than conventional techniques. The additional information reveals shortcomings in small-signal and d.c. techniques, which have been developed for models that do not describe device behaviour fully. Fast, large-signal information obtained from pulse measurements is considered to be necessary to characterise devices with full models. Requirements and advantages of future systems are discussed.

Original languageEnglish
Pages (from-to)196-205
Number of pages10
JournalJournal of Electrical and Electronics Engineering, Australia
Volume14
Issue number3
Publication statusPublished - Sep 1994
Externally publishedYes

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