Abstract
We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.
Original language | English |
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Article number | 071914 |
Pages (from-to) | 071914-1-071914-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2010 |