Tunable electrical and optical properties of hafnium nitride thin films

I. L. Farrell, R. J. Reeves, A. R H Preston, B. M. Ludbrook, J. E. Downes, B. J. Ruck, S. M. Durbin

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)
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We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.

Original languageEnglish
Article number071914
Pages (from-to)071914-1-071914-3
Number of pages3
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2010

Bibliographical note

Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied physics letters, 96(7), 071914, and may be found at http://apl.aip.org/resource/1/applab/v96/i7/p071914_s1


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