Tunable electrical and optical properties of hafnium nitride thin films

I. L. Farrell; R. J. Reeves; A. R H Preston; B. M. Ludbrook; J. E. Downes; B. J. Ruck; S. M. Durbin

doi:10.1063/1.3327329

Tunable electrical and optical properties of hafnium nitride thin films

I. L. Farrell, R. J. Reeves, A. R H Preston, B. M. Ludbrook, J. E. Downes, B. J. Ruck, S. M. Durbin

MQ Photonics Research Centre

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Abstract

We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.

Original language	English
Article number	071914
Pages (from-to)	071914-1-071914-3
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	7
DOIs	https://doi.org/10.1063/1.3327329
Publication status	Published - 2010

Bibliographical note

Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied physics letters, 96(7), 071914, and may be found at http://apl.aip.org/resource/1/applab/v96/i7/p071914_s1

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title = "Tunable electrical and optical properties of hafnium nitride thin films",

abstract = "We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.",

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note = "Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied physics letters, 96(7), 071914, and may be found at http://apl.aip.org/resource/1/applab/v96/i7/p071914\_s1",

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AU - Farrell, I. L.

AU - Reeves, R. J.

AU - Preston, A. R H

AU - Ludbrook, B. M.

AU - Downes, J. E.

AU - Ruck, B. J.

AU - Durbin, S. M.

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AB - We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.

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Tunable electrical and optical properties of hafnium nitride thin films

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