Tunable periodic microstrip structure on GaAs wafer

L. Matekovits*, M. Heimlich, K. Esselle

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

A one dimensional tunable periodic structure in microstip technology on gallium arsenide (GaAs) substrate is numerically investigated. The unit cell contains a number of patches positioned between the ground plane and the microstrip line. The patches, representing reactive loads, can be selectively short-circuited by externally-controlled FET switches integrated in the hosting substrate. The possibility of controlling the position of the band-gap, and implicitly the value of the effective dielectric constant along the line, for different combinations of the switches is demonstrated.

Original languageEnglish
Pages (from-to)1-10
Number of pages10
JournalProgress in Electromagnetics Research
Volume97
Publication statusPublished - 2009

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