Abstract
A one dimensional tunable periodic structure in microstip technology on gallium arsenide (GaAs) substrate is numerically investigated. The unit cell contains a number of patches positioned between the ground plane and the microstrip line. The patches, representing reactive loads, can be selectively short-circuited by externally-controlled FET switches integrated in the hosting substrate. The possibility of controlling the position of the band-gap, and implicitly the value of the effective dielectric constant along the line, for different combinations of the switches is demonstrated.
| Original language | English |
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| Pages (from-to) | 1-10 |
| Number of pages | 10 |
| Journal | Progress in Electromagnetics Research |
| Volume | 97 |
| Publication status | Published - 2009 |