Tunable periodic microstrip structure on GaAs wafer

L. Matekovits; M. Heimlich; K. Esselle

Tunable periodic microstrip structure on GaAs wafer

L. Matekovits^*, M. Heimlich, K. Esselle

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

A one dimensional tunable periodic structure in microstip technology on gallium arsenide (GaAs) substrate is numerically investigated. The unit cell contains a number of patches positioned between the ground plane and the microstrip line. The patches, representing reactive loads, can be selectively short-circuited by externally-controlled FET switches integrated in the hosting substrate. The possibility of controlling the position of the band-gap, and implicitly the value of the effective dielectric constant along the line, for different combinations of the switches is demonstrated.

Original language	English
Pages (from-to)	1-10
Number of pages	10
Journal	Progress in Electromagnetics Research
Volume	97
Publication status	Published - 2009

Cite this

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title = "Tunable periodic microstrip structure on GaAs wafer",

abstract = "A one dimensional tunable periodic structure in microstip technology on gallium arsenide (GaAs) substrate is numerically investigated. The unit cell contains a number of patches positioned between the ground plane and the microstrip line. The patches, representing reactive loads, can be selectively short-circuited by externally-controlled FET switches integrated in the hosting substrate. The possibility of controlling the position of the band-gap, and implicitly the value of the effective dielectric constant along the line, for different combinations of the switches is demonstrated.",

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T1 - Tunable periodic microstrip structure on GaAs wafer

AU - Matekovits, L.

AU - Heimlich, M.

AU - Esselle, K.

PY - 2009

Y1 - 2009

N2 - A one dimensional tunable periodic structure in microstip technology on gallium arsenide (GaAs) substrate is numerically investigated. The unit cell contains a number of patches positioned between the ground plane and the microstrip line. The patches, representing reactive loads, can be selectively short-circuited by externally-controlled FET switches integrated in the hosting substrate. The possibility of controlling the position of the band-gap, and implicitly the value of the effective dielectric constant along the line, for different combinations of the switches is demonstrated.

AB - A one dimensional tunable periodic structure in microstip technology on gallium arsenide (GaAs) substrate is numerically investigated. The unit cell contains a number of patches positioned between the ground plane and the microstrip line. The patches, representing reactive loads, can be selectively short-circuited by externally-controlled FET switches integrated in the hosting substrate. The possibility of controlling the position of the band-gap, and implicitly the value of the effective dielectric constant along the line, for different combinations of the switches is demonstrated.

UR - https://www.scopus.com/pages/publications/70350648510

M3 - Article

AN - SCOPUS:70350648510

SN - 1070-4698

VL - 97

SP - 1

EP - 10

JO - Progress in Electromagnetics Research

JF - Progress in Electromagnetics Research

ER -

Tunable periodic microstrip structure on GaAs wafer

Abstract

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