Tunnelling transport in Al-n-GaSb schottky diodes

A. Subekti*, T. L. Tansley, E. M. Goldys

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60 ±0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K are explained by electron tunneling. Ideality factors yield donor concentrations significantly greater than nominal accentuated by annealing suggesting modification of the reactive GaSb surface.

Original languageEnglish
Pages (from-to)2247-2248
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume45
Issue number10
DOIs
Publication statusPublished - 1998

Keywords

  • gallium antimonide
  • ideality factor
  • interface modification
  • schottky diode

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