Tunnelling transport in Al-n-GaSb schottky diodes

A. Subekti*, T. L. Tansley, E. M. Goldys

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)


    Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60 ±0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K are explained by electron tunneling. Ideality factors yield donor concentrations significantly greater than nominal accentuated by annealing suggesting modification of the reactive GaSb surface.

    Original languageEnglish
    Pages (from-to)2247-2248
    Number of pages2
    JournalIEEE Transactions on Electron Devices
    Issue number10
    Publication statusPublished - 1998


    • gallium antimonide
    • ideality factor
    • interface modification
    • schottky diode


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