Tunnelling transport in Al-n-GaSb schottky diodes

A. Subekti; T. L. Tansley; E. M. Goldys

doi:10.1109/16.725261

Tunnelling transport in Al-n-GaSb schottky diodes

A. Subekti^*, T. L. Tansley, E. M. Goldys

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60 ±0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K are explained by electron tunneling. Ideality factors yield donor concentrations significantly greater than nominal accentuated by annealing suggesting modification of the reactive GaSb surface.

Original language	English
Pages (from-to)	2247-2248
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	10
DOIs	https://doi.org/10.1109/16.725261
Publication status	Published - 1998

Keywords

gallium antimonide
ideality factor
interface modification
schottky diode

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10.1109/16.725261

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title = "Tunnelling transport in Al-n-GaSb schottky diodes",

abstract = "Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60 ±0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K are explained by electron tunneling. Ideality factors yield donor concentrations significantly greater than nominal accentuated by annealing suggesting modification of the reactive GaSb surface.",

keywords = "gallium antimonide, ideality factor, interface modification, schottky diode",

author = "A. Subekti and Tansley, \{T. L.\} and Goldys, \{E. M.\}",

year = "1998",

doi = "10.1109/16.725261",

language = "English",

volume = "45",

pages = "2247--2248",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Tunnelling transport in Al-n-GaSb schottky diodes

AU - Subekti, A.

AU - Tansley, T. L.

AU - Goldys, E. M.

PY - 1998

Y1 - 1998

N2 - Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60 ±0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K are explained by electron tunneling. Ideality factors yield donor concentrations significantly greater than nominal accentuated by annealing suggesting modification of the reactive GaSb surface.

AB - Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60 ±0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K are explained by electron tunneling. Ideality factors yield donor concentrations significantly greater than nominal accentuated by annealing suggesting modification of the reactive GaSb surface.

KW - gallium antimonide

KW - ideality factor

KW - interface modification

KW - schottky diode

UR - https://www.scopus.com/pages/publications/0032186607

U2 - 10.1109/16.725261

DO - 10.1109/16.725261

M3 - Article

AN - SCOPUS:0032186607

SN - 0018-9383

VL - 45

SP - 2247

EP - 2248

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Tunnelling transport in Al-n-GaSb schottky diodes

Abstract

Keywords

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