Two-dimensional mapping of implantation and annealing phenomena in GaAs by photoinduced microwave reflectometry

M. C. Heimlich; E. R. Atwood; R. J. Gutmann

Two-dimensional mapping of implantation and annealing phenomena in GaAs by photoinduced microwave reflectometry

M. C. Heimlich^*, E. R. Atwood, R. J. Gutmann

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs wafers processed through various stages of active channel formation are characterised by photoinduced microwave reflectometry using 2D maps. A parasitic waveguiding phenomenon is corrected by post-measurement signal processing. Results similar to those seen in previous experiments are repeated, while the added sensitivity of an improved system reveals implant damage, annealing effects and EL2 loss associated with activation. Point defect interactions during the quench of the activation anneal dominate the observed changes in the measurement.

Original language	English
Pages (from-to)	275-278
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	7
Issue number	1 A
Publication status	Published - Jan 1992
Externally published	Yes

Cite this

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title = "Two-dimensional mapping of implantation and annealing phenomena in GaAs by photoinduced microwave reflectometry",

abstract = "GaAs wafers processed through various stages of active channel formation are characterised by photoinduced microwave reflectometry using 2D maps. A parasitic waveguiding phenomenon is corrected by post-measurement signal processing. Results similar to those seen in previous experiments are repeated, while the added sensitivity of an improved system reveals implant damage, annealing effects and EL2 loss associated with activation. Point defect interactions during the quench of the activation anneal dominate the observed changes in the measurement.",

author = "Heimlich, {M. C.} and Atwood, {E. R.} and Gutmann, {R. J.}",

year = "1992",

month = jan,

language = "English",

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AU - Heimlich, M. C.

AU - Atwood, E. R.

AU - Gutmann, R. J.

PY - 1992/1

Y1 - 1992/1

N2 - GaAs wafers processed through various stages of active channel formation are characterised by photoinduced microwave reflectometry using 2D maps. A parasitic waveguiding phenomenon is corrected by post-measurement signal processing. Results similar to those seen in previous experiments are repeated, while the added sensitivity of an improved system reveals implant damage, annealing effects and EL2 loss associated with activation. Point defect interactions during the quench of the activation anneal dominate the observed changes in the measurement.

AB - GaAs wafers processed through various stages of active channel formation are characterised by photoinduced microwave reflectometry using 2D maps. A parasitic waveguiding phenomenon is corrected by post-measurement signal processing. Results similar to those seen in previous experiments are repeated, while the added sensitivity of an improved system reveals implant damage, annealing effects and EL2 loss associated with activation. Point defect interactions during the quench of the activation anneal dominate the observed changes in the measurement.

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M3 - Article

AN - SCOPUS:0026771694

SN - 0268-1242

VL - 7

SP - 275

EP - 278

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1 A

ER -

Two-dimensional mapping of implantation and annealing phenomena in GaAs by photoinduced microwave reflectometry

Abstract

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