Two-photon luminescence study of optically trapped InP semiconductor nanowires

Fan Wang*, Suriati Paiman, Qiang Gao, H. Hoe Tan, C. Jagadish, Peter J. Reece

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    Abstract

    We report the two-photon luminescence emission (2PE) study of single indium phosphide (InP) semiconductor nanowire trapped in a gradient force optical tweezers. Nanowires studied were zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from two-photon absorption of nanowires trapped in solution is strong and enhanced, compared with 2PE in InP bulk material. Besides, a distinct blue shift was observed between single-photon luminescence emission (1PE) spectra and 2PE spectra.

    Original languageEnglish
    Title of host publicationProceedings of the International Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim 2011
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages221-223
    Number of pages3
    ISBN (Electronic)9780977565788, 9781457719400
    ISBN (Print)9781457719394
    DOIs
    Publication statusPublished - 2011
    EventInternational Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim - 2011 - Sydney, NSW, Australia
    Duration: 28 Aug 20111 Sep 2011

    Other

    OtherInternational Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim - 2011
    CountryAustralia
    CitySydney, NSW
    Period28/08/111/09/11

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