Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics

Mattias Johnsson, David Rivas Góngora, Juan P. Martinez-Pastor, Thomas Volz, Lucca Seravalli, Giovanna Trevisi, Paola Frigeri, Guillermo Muñoz-Matutano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Optical studies of single self-assembled semiconductor quantum dots (QDs) have been a topic of intensive investigation over the past two decades. Due to their solid-state nature, their electronic and optical emission properties are affected by the particular crystal structure as well as many-body-carrier interactions
and dynamics. In this work, we use a master equation for microstates (MEM) model to study the carrier capture and escape from single QDs under optical nonresonant excitation and under the influence of a two-dimensional (2D) carrier reservoir (the wetting layer). This model reproduces carrier dynamics from
power-dependent and time-resolved microphotoluminescence experiments . Due to the random nature of the carrier capture and escape processes, when a single QD is pumped with enough excitation power, the carrier redistribution across the available QD microstates produces an effective double-peaked excitonic
decay. This double peak is characterized by a first ultrafast (subnanosecond) and a second conventional (approximately nanosecond) decay. The effective transient photoluminescence shape of the population dynamics is governed by the wetting-layer radiative decay and the exciton capture time.
Original languageEnglish
Article number054043
Pages (from-to)1-11
Number of pages11
JournalPhysical Review Applied
Volume11
Issue number5
DOIs
Publication statusPublished - 15 May 2019

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