Ultrahigh resistivity aluminum nitride grown on mercury cadmium telluride

K. S A Butcher; T. L. Tansley

doi:10.1063/1.1415532

Ultrahigh resistivity aluminum nitride grown on mercury cadmium telluride

K. S A Butcher, T. L. Tansley

Department of Physics and Astronomy

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10 Citations (Scopus)

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Abstract

Aluminum nitride insulating layers have been grown at room temperature with a film resistivity of 3.3×10¹⁶ cm on mercury cadmium telluride substrates. Insulator breakdown fields of 640 MV/m were reached. Capacitance-voltage measurements with Al/AlN/Hg_0.76Cd_0.24Te metalinsulator-semiconductor devices demonstrate band bending at the semiconductor surface indicating that damage to the substrate was minimized during film growth. A fixed interface charge density (given here as total charge per unit area divided by the electron charge=Q_ss/q) of +2×10¹¹ cm^-2 and a slow interface state density of 4×10¹⁰ cm^-2 were measured. The procedures for achieving these high quality insulating layers are reported. Frequency dependent dielectric constant and dielectric loss tangent measurements, carried out at room temperature and 100 K, are also presented.

Original language	English
Pages (from-to)	6217-6221
Number of pages	5
Journal	Journal of Applied Physics
Volume	90
Issue number	12
DOIs	https://doi.org/10.1063/1.1415532
Publication status	Published - 15 Dec 2001

Bibliographical note

Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied physics letters, Vol. 90, Issue 12, pp.6217-6221, and may be found at http://link.aip.org/link/?jap/90/006217.

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abstract = "Aluminum nitride insulating layers have been grown at room temperature with a film resistivity of 3.3×1016 cm on mercury cadmium telluride substrates. Insulator breakdown fields of 640 MV/m were reached. Capacitance-voltage measurements with Al/AlN/Hg0.76Cd0.24Te metalinsulator-semiconductor devices demonstrate band bending at the semiconductor surface indicating that damage to the substrate was minimized during film growth. A fixed interface charge density (given here as total charge per unit area divided by the electron charge=Qss/q) of +2×1011 cm-2 and a slow interface state density of 4×1010 cm-2 were measured. The procedures for achieving these high quality insulating layers are reported. Frequency dependent dielectric constant and dielectric loss tangent measurements, carried out at room temperature and 100 K, are also presented.",

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