Ultrathin Al layers on Si(111) and Si(100)

Structures and phase transitions

Penny Hale, Stephen Thurgate, Peter Wilkie

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    The metal/silicon system Al/Si(111)-7×7 was studied by our group with spot-profile analysis low-energy electron diffraction (SPA-LEED), reflection high-energy electron diffraction (RHEED) and scanning force microscopy (SFM), with emphasis on temperature-dependent order-disorder phase transitions of the surface structures. A review of the Al/Si(111) system describes our results in context with the findings of others. An improved phase formation diagram, including earlier results, is deduced. Between the submonolayer phases and the thick films a cluster phase (the δ-phase) was found that exists in a coverage range of 1-10 monolayers, showing intriguing temperature-dependent effects. At coverages above 20 monolayers the behaviour changes to that of thick films. Although the Al/Si(100) system has completely different reconstructions below one monolayer, the same δ-phase as on Si(111) appears at one monolayer, with similar thermal behaviour.

    Original languageEnglish
    Pages (from-to)154-160
    Number of pages7
    JournalSurface and Interface Analysis
    Volume32
    Issue number1
    DOIs
    Publication statusPublished - Aug 2001

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    Keywords

    • Aluminium
    • Clusters
    • LEED
    • MBE
    • RHEED
    • Silicon(111)

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