Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride

K. S A Butcher; H. Dou; E. M. Goldys; T. L. Tansley; S. Srikeaw

doi:10.1002/pssc.200390066

Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride

K. S A Butcher^*, H. Dou, E. M. Goldys, T. L. Tansley, S. Srikeaw

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal strength and a reduction of the apparent band-gap by up to 50 meV is observed. The thick surface oxide is believed to have formed as a result of ex-situ exposure of the samples on removal from the growth system. The importance of target nitridation for RF sputtered material is also demonstrated.

Original language	English
Pages (from-to)	373-376
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390066
Publication status	Published - 2002

Access to Document

10.1002/pssc.200390066

Cite this

@article{750ca8c6d4eb479e8df3217553e15cb5,

title = "Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride",

abstract = "UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal strength and a reduction of the apparent band-gap by up to 50 meV is observed. The thick surface oxide is believed to have formed as a result of ex-situ exposure of the samples on removal from the growth system. The importance of target nitridation for RF sputtered material is also demonstrated.",

author = "Butcher, {K. S A} and H. Dou and Goldys, {E. M.} and Tansley, {T. L.} and S. Srikeaw",

year = "2002",

doi = "10.1002/pssc.200390066",

language = "English",

pages = "373--376",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH, Wiley",

number = "1",

}

TY - JOUR

T1 - Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride

AU - Butcher, K. S A

AU - Dou, H.

AU - Goldys, E. M.

AU - Tansley, T. L.

AU - Srikeaw, S.

PY - 2002

Y1 - 2002

N2 - UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal strength and a reduction of the apparent band-gap by up to 50 meV is observed. The thick surface oxide is believed to have formed as a result of ex-situ exposure of the samples on removal from the growth system. The importance of target nitridation for RF sputtered material is also demonstrated.

AB - UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal strength and a reduction of the apparent band-gap by up to 50 meV is observed. The thick surface oxide is believed to have formed as a result of ex-situ exposure of the samples on removal from the growth system. The importance of target nitridation for RF sputtered material is also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84875100380&partnerID=8YFLogxK

U2 - 10.1002/pssc.200390066

DO - 10.1002/pssc.200390066

M3 - Article

SN - 1610-1634

SP - 373

EP - 376

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

ER -

Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride

Abstract

Access to Document

Other files and links

Fingerprint

Cite this