Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride

K. S A Butcher*, H. Dou, E. M. Goldys, T. L. Tansley, S. Srikeaw

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    UV Raman and absorption measurements plots are used to demonstrate the improvement for InN samples following removal of a surface oxide by 1.0 M HCl etching. An increase in Raman spectra signal strength and a reduction of the apparent band-gap by up to 50 meV is observed. The thick surface oxide is believed to have formed as a result of ex-situ exposure of the samples on removal from the growth system. The importance of target nitridation for RF sputtered material is also demonstrated.

    Original languageEnglish
    Pages (from-to)373-376
    Number of pages4
    JournalPhysica Status Solidi C: Conferences
    Issue number1
    DOIs
    Publication statusPublished - 2002

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