TY - GEN
T1 - Understanding field-effect passivation of black silicon
T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
AU - Wang, Shaozhou
AU - Wu, Xinyuan
AU - Ma, Fajun
AU - Zhang, Yu
AU - Scardera, Giuseppe
AU - Payne, David
AU - Abbott, Malcolm
AU - Hoex, Bram
PY - 2020
Y1 - 2020
N2 - A considerable amount of literature has revealed the effectiveness of surface passivation by charge carrier population control either using dopant profiles or charged dielectrics. Most studies assume that the substrate thickness is far larger than the space charge region. However, this assumption does not hold for nano-structured surfaces such as black silicon. In this work, we use one-dimensional modeling to understand the effect of nano-features on charge carrier population control by dielectric fixed charge Qf. We find that when Qf is smaller than ∼1×1011 cm−2, the decreasing two-surface distance will effectively compress the space charge region and intensify the surface carrier asymmetry, which can be considered as an enhancement of charge carrier population control for surface passivation. Nevertheless, when the Qf magnitude is larger than ∼1×1011 cm−2, the mirrored charge tends to concentrate at the near-surface region, and the space charge region compression is less effective. This leads to a reduced influence on the charge carrier population control and consequently little enhanced surface passivation.
AB - A considerable amount of literature has revealed the effectiveness of surface passivation by charge carrier population control either using dopant profiles or charged dielectrics. Most studies assume that the substrate thickness is far larger than the space charge region. However, this assumption does not hold for nano-structured surfaces such as black silicon. In this work, we use one-dimensional modeling to understand the effect of nano-features on charge carrier population control by dielectric fixed charge Qf. We find that when Qf is smaller than ∼1×1011 cm−2, the decreasing two-surface distance will effectively compress the space charge region and intensify the surface carrier asymmetry, which can be considered as an enhancement of charge carrier population control for surface passivation. Nevertheless, when the Qf magnitude is larger than ∼1×1011 cm−2, the mirrored charge tends to concentrate at the near-surface region, and the space charge region compression is less effective. This leads to a reduced influence on the charge carrier population control and consequently little enhanced surface passivation.
KW - field-effect passivation
KW - charge carrier population control
KW - black silicon
UR - http://www.scopus.com/inward/record.url?scp=85099585327&partnerID=8YFLogxK
U2 - 10.1109/PVSC45281.2020.9300673
DO - 10.1109/PVSC45281.2020.9300673
M3 - Conference proceeding contribution
AN - SCOPUS:85099585327
SN - 9781728161167
SP - 590
EP - 594
BT - 2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Piscataway, NJ
Y2 - 15 June 2020 through 21 August 2020
ER -