Unified compact model covering drift-diffusion to ballistic carrier transport

Sourabh Khandelwal*, Harshit Agarwal, Pragya Kushwaha, Juan Pablo Duarte, Aditya Medury, Yogesh S. Chauhan, Sayeef Salahuddin, Chenming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs.

Original languageEnglish
Article number7352335
Pages (from-to)134-137
Number of pages4
JournalIEEE Electron Device Letters
Issue number2
Publication statusPublished - 1 Feb 2016
Externally publishedYes


  • Ballistic transport
  • BSIM6 Unified Compact Model
  • Source injection velocity limit


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