Unified compact model covering drift-diffusion to ballistic carrier transport

Sourabh Khandelwal; Harshit Agarwal; Pragya Kushwaha; Juan Pablo Duarte; Aditya Medury; Yogesh S. Chauhan; Sayeef Salahuddin; Chenming Hu

doi:10.1109/LED.2015.2507519

Unified compact model covering drift-diffusion to ballistic carrier transport

Sourabh Khandelwal^*, Harshit Agarwal, Pragya Kushwaha, Juan Pablo Duarte, Aditya Medury, Yogesh S. Chauhan, Sayeef Salahuddin, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs.

Original language	English
Article number	7352335
Pages (from-to)	134-137
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	2
DOIs	https://doi.org/10.1109/LED.2015.2507519
Publication status	Published - 1 Feb 2016
Externally published	Yes

Keywords

Ballistic transport
BSIM-CMG
BSIM-IMG
BSIM6 Unified Compact Model
Source injection velocity limit

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10.1109/LED.2015.2507519

Cite this

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abstract = "In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs.",

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AU - Agarwal, Harshit

AU - Kushwaha, Pragya

AU - Duarte, Juan Pablo

AU - Medury, Aditya

AU - Chauhan, Yogesh S.

AU - Salahuddin, Sayeef

AU - Hu, Chenming

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AB - In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs.

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KW - Source injection velocity limit

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Unified compact model covering drift-diffusion to ballistic carrier transport

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Keywords

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