Unified compact model covering drift-diffusion to ballistic carrier transport

Sourabh Khandelwal; Harshit Agarwal; Pragya Kushwaha; Juan Pablo Duarte; Aditya Medury; Yogesh S. Chauhan; Sayeef Salahuddin; Chenming Hu

doi:10.1109/LED.2015.2507519

Unified compact model covering drift-diffusion to ballistic carrier transport

Sourabh Khandelwal^*, Harshit Agarwal, Pragya Kushwaha, Juan Pablo Duarte, Aditya Medury, Yogesh S. Chauhan, Sayeef Salahuddin, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs.

Original language	English
Article number	7352335
Pages (from-to)	134-137
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	2
DOIs	https://doi.org/10.1109/LED.2015.2507519
Publication status	Published - 1 Feb 2016
Externally published	Yes

Keywords

Ballistic transport
BSIM-CMG
BSIM-IMG
BSIM6 Unified Compact Model
Source injection velocity limit

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10.1109/LED.2015.2507519

Cite this

@article{8e7b38b8ca0f4deebf4812c192659ac9,

title = "Unified compact model covering drift-diffusion to ballistic carrier transport",

abstract = "In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs.",

keywords = "Ballistic transport, BSIM-CMG, BSIM-IMG, BSIM6 Unified Compact Model, Source injection velocity limit",

author = "Sourabh Khandelwal and Harshit Agarwal and Pragya Kushwaha and Duarte, {Juan Pablo} and Aditya Medury and Chauhan, {Yogesh S.} and Sayeef Salahuddin and Chenming Hu",

year = "2016",

month = feb,

day = "1",

doi = "10.1109/LED.2015.2507519",

language = "English",

volume = "37",

pages = "134--137",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "2",

}

TY - JOUR

T1 - Unified compact model covering drift-diffusion to ballistic carrier transport

AU - Khandelwal, Sourabh

AU - Agarwal, Harshit

AU - Kushwaha, Pragya

AU - Duarte, Juan Pablo

AU - Medury, Aditya

AU - Chauhan, Yogesh S.

AU - Salahuddin, Sayeef

AU - Hu, Chenming

PY - 2016/2/1

Y1 - 2016/2/1

N2 - In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs.

AB - In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs.

KW - Ballistic transport

KW - BSIM-CMG

KW - BSIM-IMG

KW - BSIM6 Unified Compact Model

KW - Source injection velocity limit

UR - http://www.scopus.com/inward/record.url?scp=84961990528&partnerID=8YFLogxK

U2 - 10.1109/LED.2015.2507519

DO - 10.1109/LED.2015.2507519

M3 - Article

AN - SCOPUS:84961990528

SN - 0741-3106

VL - 37

SP - 134

EP - 137

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 7352335

ER -

Unified compact model covering drift-diffusion to ballistic carrier transport

Abstract

Keywords

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