UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition

K. S A Butcher; null Afifuddin; P. P T Chen; E. M. Goldys; T. L. Tansley

doi:10.1002/1521-396X(200112)188:2<667::AID-PSSA667>3.0.CO;2-S

UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition

K. S A Butcher^*, Afifuddin, P. P T Chen, E. M. Goldys, T. L. Tansley

^*Corresponding author for this work

Department of Physics and Astronomy

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

GaN and AIN thin films have been grown by remote plasma enhanced chemical vapour deposition (RPE-CVD) with the assistance of ultraviolet (UV) irradiation during growth. High quality AIN insulating layers have been grown at room temperature for MIS devices. Film resistivities of up to 2.8 × 10¹⁶ Ω cm and breakdown fields of over 1.8 MV/cm have been achieved. Preliminary results for GaN indicate severe nitrogen loss when using UV desorption with an ammonia plasma, however no nitrogen deficit is seen when using a nitrogen plasma. Optical absorption data show substantial improvement in material quality when using a nitrogen plasma in preference to an ammonia plasma for GaN RPE-CVD growth.

Original language	English
Pages (from-to)	667-671
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200112)188:2<667::AID-PSSA667>3.0.CO;2-S
Publication status	Published - Nov 2001

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@article{3ab007c0423143fda9e7f4f8ca58d251,

title = "UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition",

abstract = "GaN and AIN thin films have been grown by remote plasma enhanced chemical vapour deposition (RPE-CVD) with the assistance of ultraviolet (UV) irradiation during growth. High quality AIN insulating layers have been grown at room temperature for MIS devices. Film resistivities of up to 2.8 × 1016 Ω cm and breakdown fields of over 1.8 MV/cm have been achieved. Preliminary results for GaN indicate severe nitrogen loss when using UV desorption with an ammonia plasma, however no nitrogen deficit is seen when using a nitrogen plasma. Optical absorption data show substantial improvement in material quality when using a nitrogen plasma in preference to an ammonia plasma for GaN RPE-CVD growth.",

author = "Butcher, {K. S A} and Afifuddin and Chen, {P. P T} and Goldys, {E. M.} and Tansley, {T. L.}",

year = "2001",

month = "11",

doi = "10.1002/1521-396X(200112)188:2<667::AID-PSSA667>3.0.CO;2-S",

language = "English",

volume = "188",

pages = "667--671",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH, Wiley",

number = "2",

}

TY - JOUR

T1 - UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition

AU - Butcher, K. S A

AU - Afifuddin, null

AU - Chen, P. P T

AU - Goldys, E. M.

AU - Tansley, T. L.

PY - 2001/11

Y1 - 2001/11

N2 - GaN and AIN thin films have been grown by remote plasma enhanced chemical vapour deposition (RPE-CVD) with the assistance of ultraviolet (UV) irradiation during growth. High quality AIN insulating layers have been grown at room temperature for MIS devices. Film resistivities of up to 2.8 × 1016 Ω cm and breakdown fields of over 1.8 MV/cm have been achieved. Preliminary results for GaN indicate severe nitrogen loss when using UV desorption with an ammonia plasma, however no nitrogen deficit is seen when using a nitrogen plasma. Optical absorption data show substantial improvement in material quality when using a nitrogen plasma in preference to an ammonia plasma for GaN RPE-CVD growth.

AB - GaN and AIN thin films have been grown by remote plasma enhanced chemical vapour deposition (RPE-CVD) with the assistance of ultraviolet (UV) irradiation during growth. High quality AIN insulating layers have been grown at room temperature for MIS devices. Film resistivities of up to 2.8 × 1016 Ω cm and breakdown fields of over 1.8 MV/cm have been achieved. Preliminary results for GaN indicate severe nitrogen loss when using UV desorption with an ammonia plasma, however no nitrogen deficit is seen when using a nitrogen plasma. Optical absorption data show substantial improvement in material quality when using a nitrogen plasma in preference to an ammonia plasma for GaN RPE-CVD growth.

UR - http://www.scopus.com/inward/record.url?scp=1842635376&partnerID=8YFLogxK

U2 - 10.1002/1521-396X(200112)188:2<667::AID-PSSA667>3.0.CO;2-S

DO - 10.1002/1521-396X(200112)188:2<667::AID-PSSA667>3.0.CO;2-S

M3 - Article

VL - 188

SP - 667

EP - 671

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 2

ER -