UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition

K. S A Butcher*, Afifuddin, P. P T Chen, E. M. Goldys, T. L. Tansley

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    GaN and AIN thin films have been grown by remote plasma enhanced chemical vapour deposition (RPE-CVD) with the assistance of ultraviolet (UV) irradiation during growth. High quality AIN insulating layers have been grown at room temperature for MIS devices. Film resistivities of up to 2.8 × 1016 Ω cm and breakdown fields of over 1.8 MV/cm have been achieved. Preliminary results for GaN indicate severe nitrogen loss when using UV desorption with an ammonia plasma, however no nitrogen deficit is seen when using a nitrogen plasma. Optical absorption data show substantial improvement in material quality when using a nitrogen plasma in preference to an ammonia plasma for GaN RPE-CVD growth.

    Original languageEnglish
    Pages (from-to)667-671
    Number of pages5
    JournalPhysica Status Solidi (A) Applied Research
    Volume188
    Issue number2
    DOIs
    Publication statusPublished - Nov 2001

    Fingerprint

    Dive into the research topics of 'UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition'. Together they form a unique fingerprint.

    Cite this