Abstract
The development of a compact, 0.1 um GaAs, V-band, power-Amplifier cell is reported. The cell is a building block suitable for stacking in order to implement amplifiers with higher power. The cell delivers 23.0 dBm in saturation at 60 GHz with a PAE of 19%. The 3-dB bandwidth is 10 GHz with a peak small-signal gain of 24.8 dB. For the design, a single-finger pHEMT model and foundry model were used and compared.
| Original language | English |
|---|---|
| Title of host publication | 2025 6th Australian Microwave Symposium (AMS) |
| Place of Publication | Piscataway, NJ |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 79-80 |
| Number of pages | 2 |
| ISBN (Electronic) | 9798350379969 |
| ISBN (Print) | 9798350379976 |
| DOIs | |
| Publication status | Published - 2025 |
| Event | 6th Australian Microwave Symposium, AMS 2025 - Gold Coast, Australia Duration: 10 Feb 2025 → 11 Feb 2025 |
Conference
| Conference | 6th Australian Microwave Symposium, AMS 2025 |
|---|---|
| Country/Territory | Australia |
| City | Gold Coast |
| Period | 10/02/25 → 11/02/25 |
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