Validation of a new nonlinear HEMT model by intermodulation characterization

Guoli Qu; Anthony E. Parker

Validation of a new nonlinear HEMT model by intermodulation characterization

Guoli Qu^*, Anthony E. Parker

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A new HEMT model is presented. The second and third-order intermodulation products of HEMT amplifiers are investigated at low frequency (50 MHz) and high frequency (1 GHz) respectively. Simulations performed with SPICE agree well with measurements. The contribution of nonlinear capacitance to intermodulation distortion is investigated.

Original language	English
Pages (from-to)	745-748
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 1998

Cite this

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title = "Validation of a new nonlinear HEMT model by intermodulation characterization",

abstract = "A new HEMT model is presented. The second and third-order intermodulation products of HEMT amplifiers are investigated at low frequency (50 MHz) and high frequency (1 GHz) respectively. Simulations performed with SPICE agree well with measurements. The contribution of nonlinear capacitance to intermodulation distortion is investigated.",

author = "Guoli Qu and Parker, \{Anthony E.\}",

year = "1998",

language = "English",

volume = "2",

pages = "745--748",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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TY - JOUR

T1 - Validation of a new nonlinear HEMT model by intermodulation characterization

AU - Qu, Guoli

AU - Parker, Anthony E.

PY - 1998

Y1 - 1998

N2 - A new HEMT model is presented. The second and third-order intermodulation products of HEMT amplifiers are investigated at low frequency (50 MHz) and high frequency (1 GHz) respectively. Simulations performed with SPICE agree well with measurements. The contribution of nonlinear capacitance to intermodulation distortion is investigated.

AB - A new HEMT model is presented. The second and third-order intermodulation products of HEMT amplifiers are investigated at low frequency (50 MHz) and high frequency (1 GHz) respectively. Simulations performed with SPICE agree well with measurements. The contribution of nonlinear capacitance to intermodulation distortion is investigated.

UR - https://www.scopus.com/pages/publications/0031619298

M3 - Article

AN - SCOPUS:0031619298

SN - 0149-645X

VL - 2

SP - 745

EP - 748

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

ER -

Validation of a new nonlinear HEMT model by intermodulation characterization

Abstract

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