Validation of the industry-standard ASM-GaN model for gate-length scaling

Sayed Ali Albahrani; Jason Hodges; Lars Heuken; Dirk Schwantuschke; Thomas Gneiting; Joachim N. Burghartz; Sourabh Khandelwal

doi:10.1109/AMS48904.2020.9059542

Validation of the industry-standard ASM-GaN model for gate-length scaling

Sayed Ali Albahrani, Jason Hodges, Lars Heuken, Dirk Schwantuschke, Thomas Gneiting, Joachim N. Burghartz, Sourabh Khandelwal

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

This paper validates the industry standard ASMGaN compact model in terms of capturing the effect of gatelength scaling. Pulsed IV measurements were performed to measure the variation in the IV characteristics of the GaN HEMT structure under test with gate length, in isolation from the effect of trapping. The model has been validated by comparing the simulation results of the model with the pulsed IV measurement results of three AlGaN/GaN Schottky HEMTs which differed only in terms of their gate lengths.

Original language	English
Title of host publication	2020 4th Australian Microwave Symposium (AMS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781728110493
ISBN (Print)	9781728110509
DOIs	https://doi.org/10.1109/AMS48904.2020.9059542
Publication status	Published - 2020
Event	4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia Duration: 13 Feb 2020 → 14 Feb 2020

Conference

Conference	4th Australian Microwave Symposium, AMS 2020
Country/Territory	Australia
City	Sydney
Period	13/02/20 → 14/02/20

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10.1109/AMS48904.2020.9059542

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title = "Validation of the industry-standard ASM-GaN model for gate-length scaling",

abstract = "This paper validates the industry standard ASMGaN compact model in terms of capturing the effect of gatelength scaling. Pulsed IV measurements were performed to measure the variation in the IV characteristics of the GaN HEMT structure under test with gate length, in isolation from the effect of trapping. The model has been validated by comparing the simulation results of the model with the pulsed IV measurement results of three AlGaN/GaN Schottky HEMTs which differed only in terms of their gate lengths.",

author = "Albahrani, {Sayed Ali} and Jason Hodges and Lars Heuken and Dirk Schwantuschke and Thomas Gneiting and Burghartz, {Joachim N.} and Sourabh Khandelwal",

year = "2020",

doi = "10.1109/AMS48904.2020.9059542",

language = "English",

isbn = "9781728110509",

pages = "1--2",

booktitle = "2020 4th Australian Microwave Symposium (AMS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "4th Australian Microwave Symposium, AMS 2020 ; Conference date: 13-02-2020 Through 14-02-2020",

}

Albahrani, SA, Hodges, J, Heuken, L, Schwantuschke, D, Gneiting, T, Burghartz, JN & Khandelwal, S 2020, Validation of the industry-standard ASM-GaN model for gate-length scaling. in 2020 4th Australian Microwave Symposium (AMS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-2, 4th Australian Microwave Symposium, AMS 2020, Sydney, Australia, 13/02/20. https://doi.org/10.1109/AMS48904.2020.9059542

Validation of the industry-standard ASM-GaN model for gate-length scaling. / Albahrani, Sayed Ali; Hodges, Jason; Heuken, Lars et al.
2020 4th Australian Microwave Symposium (AMS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2020. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Albahrani, Sayed Ali

AU - Hodges, Jason

AU - Heuken, Lars

AU - Schwantuschke, Dirk

AU - Gneiting, Thomas

AU - Burghartz, Joachim N.

AU - Khandelwal, Sourabh

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N2 - This paper validates the industry standard ASMGaN compact model in terms of capturing the effect of gatelength scaling. Pulsed IV measurements were performed to measure the variation in the IV characteristics of the GaN HEMT structure under test with gate length, in isolation from the effect of trapping. The model has been validated by comparing the simulation results of the model with the pulsed IV measurement results of three AlGaN/GaN Schottky HEMTs which differed only in terms of their gate lengths.

AB - This paper validates the industry standard ASMGaN compact model in terms of capturing the effect of gatelength scaling. Pulsed IV measurements were performed to measure the variation in the IV characteristics of the GaN HEMT structure under test with gate length, in isolation from the effect of trapping. The model has been validated by comparing the simulation results of the model with the pulsed IV measurement results of three AlGaN/GaN Schottky HEMTs which differed only in terms of their gate lengths.

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U2 - 10.1109/AMS48904.2020.9059542

DO - 10.1109/AMS48904.2020.9059542

M3 - Conference proceeding contribution

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SP - 1

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BT - 2020 4th Australian Microwave Symposium (AMS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 4th Australian Microwave Symposium, AMS 2020

Y2 - 13 February 2020 through 14 February 2020

ER -

Validation of the industry-standard ASM-GaN model for gate-length scaling

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