Validation of the industry-standard ASM-GaN model for gate-length scaling

Sayed Ali Albahrani, Jason Hodges, Lars Heuken, Dirk Schwantuschke, Thomas Gneiting, Joachim N. Burghartz, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

This paper validates the industry standard ASMGaN compact model in terms of capturing the effect of gatelength scaling. Pulsed IV measurements were performed to measure the variation in the IV characteristics of the GaN HEMT structure under test with gate length, in isolation from the effect of trapping. The model has been validated by comparing the simulation results of the model with the pulsed IV measurement results of three AlGaN/GaN Schottky HEMTs which differed only in terms of their gate lengths.

Original languageEnglish
Title of host publication2020 4th Australian Microwave Symposium (AMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-2
Number of pages2
ISBN (Electronic)9781728110493
ISBN (Print)9781728110509
DOIs
Publication statusPublished - 2020
Event4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia
Duration: 13 Feb 202014 Feb 2020

Conference

Conference4th Australian Microwave Symposium, AMS 2020
CountryAustralia
CitySydney
Period13/02/2014/02/20

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