Vibrational stirring of a liquid phase epitaxial GaAs melt

D. Alexiev; K. S. A. Butcher; T. L. Tansley

doi:10.1016/0022-0248(92)90352-J

Vibrational stirring of a liquid phase epitaxial GaAs melt

D. Alexiev^*, K. S. A. Butcher, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

2 Citations (Scopus)

Abstract

Low frequency vibrational stirring was applied to a LPE growth crucible. The GaAs epitaxial layers grown showed superior crystallinity, as revealed by optical microscopy. Inclusions of Ga noted earlier were eliminated with a notable improvement in the interface layer, resulting in good crystal surface topology.

Original language	English
Pages (from-to)	378-380
Number of pages	3
Journal	Journal of Crystal Growth
Volume	125
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(92)90352-J
Publication status	Published - 2 Nov 1992

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title = "Vibrational stirring of a liquid phase epitaxial GaAs melt",

abstract = "Low frequency vibrational stirring was applied to a LPE growth crucible. The GaAs epitaxial layers grown showed superior crystallinity, as revealed by optical microscopy. Inclusions of Ga noted earlier were eliminated with a notable improvement in the interface layer, resulting in good crystal surface topology.",

author = "D. Alexiev and Butcher, {K. S. A.} and Tansley, {T. L.}",

year = "1992",

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T1 - Vibrational stirring of a liquid phase epitaxial GaAs melt

AU - Alexiev, D.

AU - Butcher, K. S. A.

AU - Tansley, T. L.

PY - 1992/11/2

Y1 - 1992/11/2

N2 - Low frequency vibrational stirring was applied to a LPE growth crucible. The GaAs epitaxial layers grown showed superior crystallinity, as revealed by optical microscopy. Inclusions of Ga noted earlier were eliminated with a notable improvement in the interface layer, resulting in good crystal surface topology.

AB - Low frequency vibrational stirring was applied to a LPE growth crucible. The GaAs epitaxial layers grown showed superior crystallinity, as revealed by optical microscopy. Inclusions of Ga noted earlier were eliminated with a notable improvement in the interface layer, resulting in good crystal surface topology.

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U2 - 10.1016/0022-0248(92)90352-J

DO - 10.1016/0022-0248(92)90352-J

M3 - Letter

AN - SCOPUS:0027109740

SN - 0022-0248

VL - 125

SP - 378

EP - 380

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Vibrational stirring of a liquid phase epitaxial GaAs melt

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