Vibrational stirring of a liquid phase epitaxial GaAs melt

D. Alexiev*, K. S. A. Butcher, T. L. Tansley

*Corresponding author for this work

    Research output: Contribution to journalLetterpeer-review

    2 Citations (Scopus)


    Low frequency vibrational stirring was applied to a LPE growth crucible. The GaAs epitaxial layers grown showed superior crystallinity, as revealed by optical microscopy. Inclusions of Ga noted earlier were eliminated with a notable improvement in the interface layer, resulting in good crystal surface topology.

    Original languageEnglish
    Pages (from-to)378-380
    Number of pages3
    JournalJournal of Crystal Growth
    Issue number1-2
    Publication statusPublished - 2 Nov 1992


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