Vibrational stirring of a liquid phase epitaxial GaAs melt

D. Alexiev*, K. S. A. Butcher, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalLetter

2 Citations (Scopus)

Abstract

Low frequency vibrational stirring was applied to a LPE growth crucible. The GaAs epitaxial layers grown showed superior crystallinity, as revealed by optical microscopy. Inclusions of Ga noted earlier were eliminated with a notable improvement in the interface layer, resulting in good crystal surface topology.

Original languageEnglish
Pages (from-to)378-380
Number of pages3
JournalJournal of Crystal Growth
Volume125
Issue number1-2
DOIs
Publication statusPublished - 2 Nov 1992

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