Wide-band matching of a tunable periodic structure in GaAs technology

L. Matekovits*, D. N. P. Thalakotuna, M. Heimlich, K. P. Esselle

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)
1 Downloads (Pure)

Abstract

Wide-band matching of a tunable 1D periodic microwave structure, designed for fabrication in GaAs technology, is investigated. The two-layer unit cell of the periodic structure consists of a microstrip line loaded by multiple rectangular patches, which can be selectively short-circuited. The wide variation of the position of the bandgap, obtained by electrically controlled switches, induces a large variation of the effective dielectric constant in the considered wide frequency range. This effect is further reflected as a significant variation of the characteristic impedance, and hence a potentially high mismatch loss. A method for wide-band minimization of the mismatch (with respect to a 50ω reference impedance), without compromising the performance of the device, is presented.

Original languageEnglish
Title of host publicationFinal Program and Book of Abstracts - iWAT 2011: 2011 IEEE International Workshop on Antenna Technology: Small Antennas, Novel Structures and Innovative Metamaterials
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages376-379
Number of pages4
ISBN (Print)9781424491339
DOIs
Publication statusPublished - 2011
Event2011 International Workshop on Antenna Technology: Small Antennas, Novel Structures and Innovative Metamaterials, iWAT 2011 - Hong Kong, China
Duration: 7 Mar 20119 Mar 2011

Other

Other2011 International Workshop on Antenna Technology: Small Antennas, Novel Structures and Innovative Metamaterials, iWAT 2011
CountryChina
CityHong Kong
Period7/03/119/03/11

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