X-band GaAs stacked-FET amplifier

David J. Niven; Simon J. Mahon; Michael C. Heimlich

doi:10.1109/APMC52720.2021.9661879

X-band GaAs stacked-FET amplifier

David J. Niven, Simon J. Mahon, Michael C. Heimlich

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

A MMIC power amplifier is developed on a GaAs process using stacked-FET technology. The amplifier delivers 2 W output power and greater than 20% power added efficiency in X-band. Excellent agreement is demonstrated between measurement and simulation.

Original language	English
Title of host publication	2021 IEEE Asia-Pacific Microwave Conference (APMC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	115-117
Number of pages	3
ISBN (Electronic)	9781665437820
ISBN (Print)	9781665437837
DOIs	https://doi.org/10.1109/APMC52720.2021.9661879
Publication status	Published - 2021
Event	2021 IEEE Asia-Pacific Microwave Conference, APMC 2021 - Virtual, Online, Australia Duration: 28 Nov 2021 → 1 Dec 2021

Conference

Conference	2021 IEEE Asia-Pacific Microwave Conference, APMC 2021
Country/Territory	Australia
City	Virtual, Online
Period	28/11/21 → 1/12/21

Keywords

GaAs
Stacked-FET

Access to Document

10.1109/APMC52720.2021.9661879

Cite this

@inproceedings{8ba76cda026c4a9f85558bf2643247df,

title = "X-band GaAs stacked-FET amplifier",

abstract = "A MMIC power amplifier is developed on a GaAs process using stacked-FET technology. The amplifier delivers 2 W output power and greater than 20% power added efficiency in X-band. Excellent agreement is demonstrated between measurement and simulation.",

keywords = "GaAs, Stacked-FET",

author = "Niven, {David J.} and Mahon, {Simon J.} and Heimlich, {Michael C.}",

year = "2021",

doi = "10.1109/APMC52720.2021.9661879",

language = "English",

isbn = "9781665437837",

pages = "115--117",

booktitle = "2021 IEEE Asia-Pacific Microwave Conference (APMC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2021 IEEE Asia-Pacific Microwave Conference, APMC 2021 ; Conference date: 28-11-2021 Through 01-12-2021",

}

TY - GEN

T1 - X-band GaAs stacked-FET amplifier

AU - Niven, David J.

AU - Mahon, Simon J.

AU - Heimlich, Michael C.

PY - 2021

Y1 - 2021

N2 - A MMIC power amplifier is developed on a GaAs process using stacked-FET technology. The amplifier delivers 2 W output power and greater than 20% power added efficiency in X-band. Excellent agreement is demonstrated between measurement and simulation.

AB - A MMIC power amplifier is developed on a GaAs process using stacked-FET technology. The amplifier delivers 2 W output power and greater than 20% power added efficiency in X-band. Excellent agreement is demonstrated between measurement and simulation.

KW - GaAs

KW - Stacked-FET

UR - http://www.scopus.com/inward/record.url?scp=85124403895&partnerID=8YFLogxK

U2 - 10.1109/APMC52720.2021.9661879

DO - 10.1109/APMC52720.2021.9661879

M3 - Conference proceeding contribution

AN - SCOPUS:85124403895

SN - 9781665437837

SP - 115

EP - 117

BT - 2021 IEEE Asia-Pacific Microwave Conference (APMC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2021 IEEE Asia-Pacific Microwave Conference, APMC 2021

Y2 - 28 November 2021 through 1 December 2021

ER -

X-band GaAs stacked-FET amplifier

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Keywords

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