X-band GaN stacked-FET power amplifier

David J. Niven*, Simon J. Mahon, Michael C. Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

A MMIC power amplifier is developed on a GaN process using stacked-FET technology. The amplifier delivers 20 W of output power and 25% power added efficiency at 10GHz. Excellent agreement is demonstrated between measurement and simulation.

Original languageEnglish
Title of host publication2023 5th Australian Microwave Symposium (AMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages19-20
Number of pages2
ISBN (Electronic)9798350399363
ISBN (Print)9798350399370
DOIs
Publication statusPublished - 2023
Event5th Australian Microwave Symposium, AMS 2023 - Melbourne, Australia
Duration: 16 Feb 202317 Feb 2023

Conference

Conference5th Australian Microwave Symposium, AMS 2023
Country/TerritoryAustralia
CityMelbourne
Period16/02/2317/02/23

Keywords

  • GaN
  • stacked-FET

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