X-band high-efficiency GaAs MMIC PA

Aaron Pereira, Anthony Parker, Michael Heimlich, Neil Weste, Ruediger Quay, Vincenzo Carrubba

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

4 Citations (Scopus)

Abstract

This paper reports on the design and fabrication of a low cost, single stage, X-Band power amplifier for radar applications. A 0.1um GaAs technology from WIN Semiconductor was chosen and the PA was designed by using a reactively matched class AB approach. Here the PA was designed by engineering the load and source fundamental impedances for the highest PAE while short circuiting the second harmonic load termination. Measurement results performed at a frequency of 9 GHz show drain efficiency and PAE as high as 58.8% and 55.3% while delivering 0.55 W of maximum output power with a linear and power gain of 18.5 dB and 15 dB, respectively.

Original languageEnglish
Title of host publication2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Print)9781479946082
DOIs
Publication statusPublished - 2014
Event2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014 - Tampa, FL, United States
Duration: 6 Jun 20146 Jun 2014

Other

Other2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014
CountryUnited States
CityTampa, FL
Period6/06/146/06/14

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  • Cite this

    Pereira, A., Parker, A., Heimlich, M., Weste, N., Quay, R., & Carrubba, V. (2014). X-band high-efficiency GaAs MMIC PA. In 2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014 (pp. 1-4). [6857786] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/WAMICON.2014.6857786