X-band high-efficiency GaAs MMIC PA

Aaron Pereira; Anthony Parker; Michael Heimlich; Neil Weste; Ruediger Quay; Vincenzo Carrubba

doi:10.1109/WAMICON.2014.6857786

X-band high-efficiency GaAs MMIC PA

Aaron Pereira, Anthony Parker, Michael Heimlich, Neil Weste, Ruediger Quay, Vincenzo Carrubba

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

This paper reports on the design and fabrication of a low cost, single stage, X-Band power amplifier for radar applications. A 0.1um GaAs technology from WIN Semiconductor was chosen and the PA was designed by using a reactively matched class AB approach. Here the PA was designed by engineering the load and source fundamental impedances for the highest PAE while short circuiting the second harmonic load termination. Measurement results performed at a frequency of 9 GHz show drain efficiency and PAE as high as 58.8% and 55.3% while delivering 0.55 W of maximum output power with a linear and power gain of 18.5 dB and 15 dB, respectively.

Original language	English
Title of host publication	2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Print)	9781479946082
DOIs	https://doi.org/10.1109/WAMICON.2014.6857786
Publication status	Published - 2014
Event	2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014 - Tampa, FL, United States Duration: 6 Jun 2014 → 6 Jun 2014

Other

Other	2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014
Country/Territory	United States
City	Tampa, FL
Period	6/06/14 → 6/06/14

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10.1109/WAMICON.2014.6857786

Cite this

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title = "X-band high-efficiency GaAs MMIC PA",

abstract = "This paper reports on the design and fabrication of a low cost, single stage, X-Band power amplifier for radar applications. A 0.1um GaAs technology from WIN Semiconductor was chosen and the PA was designed by using a reactively matched class AB approach. Here the PA was designed by engineering the load and source fundamental impedances for the highest PAE while short circuiting the second harmonic load termination. Measurement results performed at a frequency of 9 GHz show drain efficiency and PAE as high as 58.8% and 55.3% while delivering 0.55 W of maximum output power with a linear and power gain of 18.5 dB and 15 dB, respectively.",

author = "Aaron Pereira and Anthony Parker and Michael Heimlich and Neil Weste and Ruediger Quay and Vincenzo Carrubba",

year = "2014",

doi = "10.1109/WAMICON.2014.6857786",

language = "English",

isbn = "9781479946082",

pages = "1--4",

booktitle = "2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014 ; Conference date: 06-06-2014 Through 06-06-2014",

}

Pereira, A, Parker, A, Heimlich, M, Weste, N, Quay, R & Carrubba, V 2014, X-band high-efficiency GaAs MMIC PA. in 2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014., 6857786, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014, Tampa, FL, United States, 6/06/14. https://doi.org/10.1109/WAMICON.2014.6857786

X-band high-efficiency GaAs MMIC PA. / Pereira, Aaron; Parker, Anthony; Heimlich, Michael et al.
2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 1-4 6857786.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - X-band high-efficiency GaAs MMIC PA

AU - Pereira, Aaron

AU - Parker, Anthony

AU - Heimlich, Michael

AU - Weste, Neil

AU - Quay, Ruediger

AU - Carrubba, Vincenzo

PY - 2014

Y1 - 2014

N2 - This paper reports on the design and fabrication of a low cost, single stage, X-Band power amplifier for radar applications. A 0.1um GaAs technology from WIN Semiconductor was chosen and the PA was designed by using a reactively matched class AB approach. Here the PA was designed by engineering the load and source fundamental impedances for the highest PAE while short circuiting the second harmonic load termination. Measurement results performed at a frequency of 9 GHz show drain efficiency and PAE as high as 58.8% and 55.3% while delivering 0.55 W of maximum output power with a linear and power gain of 18.5 dB and 15 dB, respectively.

AB - This paper reports on the design and fabrication of a low cost, single stage, X-Band power amplifier for radar applications. A 0.1um GaAs technology from WIN Semiconductor was chosen and the PA was designed by using a reactively matched class AB approach. Here the PA was designed by engineering the load and source fundamental impedances for the highest PAE while short circuiting the second harmonic load termination. Measurement results performed at a frequency of 9 GHz show drain efficiency and PAE as high as 58.8% and 55.3% while delivering 0.55 W of maximum output power with a linear and power gain of 18.5 dB and 15 dB, respectively.

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BT - 2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014

Y2 - 6 June 2014 through 6 June 2014

ER -

X-band high-efficiency GaAs MMIC PA

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