X-ray photoelectron spectroscopy of AlxGa1-xSb grown by metalorganic chemical vapour deposition

A. H. Ramelan, K. S A Butcher, E. M. Goldys

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

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The extent of oxidation and growth derived oxygen contamination for Al0.05Ga0.95Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d5/2 and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al2O3, Sb2O2 and Ga2o5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al0.05Ga0.95Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.

Original languageEnglish
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
EditorsMichael Gal
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)0780375718, 9780780375710
Publication statusPublished - 2002
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: 11 Dec 200213 Dec 2002


OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002

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