TY - GEN
T1 - X-ray photoelectron spectroscopy of AlxGa1-xSb grown by metalorganic chemical vapour deposition
AU - Ramelan, A. H.
AU - Butcher, K. S A
AU - Goldys, E. M.
N1 - Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
PY - 2002
Y1 - 2002
N2 - The extent of oxidation and growth derived oxygen contamination for Al0.05Ga0.95Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d5/2 and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al2O3, Sb2O2 and Ga2o5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al0.05Ga0.95Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.
AB - The extent of oxidation and growth derived oxygen contamination for Al0.05Ga0.95Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d5/2 and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al2O3, Sb2O2 and Ga2o5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al0.05Ga0.95Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.
UR - http://www.scopus.com/inward/record.url?scp=84952672922&partnerID=8YFLogxK
U2 - 10.1109/COMMAD.2002.1237214
DO - 10.1109/COMMAD.2002.1237214
M3 - Conference proceeding contribution
AN - SCOPUS:84952672922
VL - 2002-January
SP - 149
EP - 152
BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
A2 - Gal, Michael
PB - Institute of Electrical and Electronics Engineers (IEEE)
CY - Piscataway, NJ
T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Y2 - 11 December 2002 through 13 December 2002
ER -