X-ray photoelectron spectroscopy of AlxGa1-xSb grown by metalorganic chemical vapour deposition

A. H. Ramelan, K. S A Butcher, E. M. Goldys

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

12 Downloads (Pure)

Abstract

The extent of oxidation and growth derived oxygen contamination for Al0.05Ga0.95Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d5/2 and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al2O3, Sb2O2 and Ga2o5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al0.05Ga0.95Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.

Original languageEnglish
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
EditorsMichael Gal
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages149-152
Number of pages4
Volume2002-January
ISBN (Electronic)0780375718, 9780780375710
DOIs
Publication statusPublished - 2002
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: 11 Dec 200213 Dec 2002

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
CountryAustralia
CitySydney
Period11/12/0213/12/02

Bibliographical note

Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Fingerprint Dive into the research topics of 'X-ray photoelectron spectroscopy of Al<sub>x</sub>Ga<sub>1-x</sub>Sb grown by metalorganic chemical vapour deposition'. Together they form a unique fingerprint.

Cite this