X-ray photoelectron spectroscopy of AlxGa1-xSb grown by metalorganic chemical vapour deposition

A. H. Ramelan; K. S A Butcher; E. M. Goldys

doi:10.1109/COMMAD.2002.1237214

X-ray photoelectron spectroscopy of Al_xGa_1-xSb grown by metalorganic chemical vapour deposition

A. H. Ramelan, K. S A Butcher, E. M. Goldys

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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Abstract

The extent of oxidation and growth derived oxygen contamination for Al_0.05Ga_0.95Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d_5/2 and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al₂O₃, Sb₂O₂ and Ga₂o₅) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al_0.05Ga_0.95Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.

Original language	English
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
Editors	Michael Gal
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	149-152
Number of pages	4
Volume	2002-January
ISBN (Electronic)	0780375718, 9780780375710
DOIs	https://doi.org/10.1109/COMMAD.2002.1237214
Publication status	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: 11 Dec 2002 → 13 Dec 2002

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	11/12/02 → 13/12/02

Bibliographical note

Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

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10.1109/COMMAD.2002.1237214

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Cite this

Ramelan, A. H., Butcher, K. S. A., & Goldys, E. M. (2002). X-ray photoelectron spectroscopy of Al_xGa_1-xSb grown by metalorganic chemical vapour deposition. In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (Vol. 2002-January, pp. 149-152). Article 1237214 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2002.1237214

Ramelan, A. H. ; Butcher, K. S A ; Goldys, E. M. / X-ray photoelectron spectroscopy of Al_xGa_1-xSb grown by metalorganic chemical vapour deposition. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. editor / Michael Gal. Vol. 2002-January Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2002. pp. 149-152

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Ramelan, AH, Butcher, KSA & Goldys, EM 2002, X-ray photoelectron spectroscopy of Al_xGa_1-xSb grown by metalorganic chemical vapour deposition. in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. vol. 2002-January, 1237214, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 149-152, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 11/12/02. https://doi.org/10.1109/COMMAD.2002.1237214

X-ray photoelectron spectroscopy of Al_xGa_1-xSb grown by metalorganic chemical vapour deposition. / Ramelan, A. H.; Butcher, K. S A; Goldys, E. M.
2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Vol. 2002-January Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2002. p. 149-152 1237214.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - X-ray photoelectron spectroscopy of AlxGa1-xSb grown by metalorganic chemical vapour deposition

AU - Ramelan, A. H.

AU - Butcher, K. S A

AU - Goldys, E. M.

N1 - Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

PY - 2002

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N2 - The extent of oxidation and growth derived oxygen contamination for Al0.05Ga0.95Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d5/2 and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al2O3, Sb2O2 and Ga2o5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al0.05Ga0.95Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.

AB - The extent of oxidation and growth derived oxygen contamination for Al0.05Ga0.95Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spectroscopy (XPS) using a system with high-energy resolution. The Sb3d5/2 and O1s peaks are well resolved and the Ga3d peaks are also well resolved. As expected, all samples investigated show oxide layers (Al2O3, Sb2O2 and Ga2o5) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. This indicates that the surface aluminium is very reactive to oxygen from the environment. Carbon content on the surface was also very high. Deeper into the layer, the carbon signal was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS) indicating that the carbon was due to atmospheric exposure. The results indicate extremely low carbon content for Al0.05Ga0.95Sb epilayers grown using TMAl, TMGa and TMSb as metalorganic precursors in an MOCVD system.

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DO - 10.1109/COMMAD.2002.1237214

M3 - Conference proceeding contribution

AN - SCOPUS:84952672922

VL - 2002-January

SP - 149

EP - 152

BT - 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings

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PB - Institute of Electrical and Electronics Engineers (IEEE)

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Ramelan AH, Butcher KSA, Goldys EM. X-ray photoelectron spectroscopy of Al_xGa_1-xSb grown by metalorganic chemical vapour deposition. In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Vol. 2002-January. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2002. p. 149-152. 1237214 doi: 10.1109/COMMAD.2002.1237214