We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at approx. 900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.
|Title of host publication||Materials Research Society Symposium - Proceedings|
|Place of Publication||Cambridge|
|Publisher||Cambridge University Press|
|Number of pages||6|
|Publication status||Published - 2000|