Zirconium mediated hydrogen outdiffusion from p-GaN

Eliana A.  Kaminska; Anna M.  Piotrowska; Adam J.  Barcz; Jakub  Jasinski; Michał  Zielinski; Krystyna  Golaszewska; Robert F.  Davis; Ewa M.  Goldys; Krystyna  Tomsia

Zirconium mediated hydrogen outdiffusion from p-GaN

Eliana A. Kaminska, Anna M. Piotrowska, Adam J. Barcz, Jakub Jasinski, Michał Zielinski, Krystyna Golaszewska, Robert F. Davis, Ewa M. Goldys, Krystyna Tomsia

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at approx. 900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB₂ metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Place of Publication	Cambridge
Publisher	Cambridge University Press (CUP)
Pages	W1091-W1096
Number of pages	6
Volume	595
Publication status	Published - 2000
Externally published	Yes

Cite this

@inproceedings{cdc51f5bfbed4aa49ceccd4bec2bdb82,

title = "Zirconium mediated hydrogen outdiffusion from p-GaN",

abstract = "We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at approx. 900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.",

author = "Kaminska, {Eliana A.} and Piotrowska, {Anna M.} and Barcz, {Adam J.} and Jakub Jasinski and Micha{\l} Zielinski and Krystyna Golaszewska and Davis, {Robert F.} and Goldys, {Ewa M.} and Krystyna Tomsia",

year = "2000",

language = "English",

volume = "595",

pages = "W1091--W1096",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Cambridge University Press (CUP)",

address = "United Kingdom",

}

Zirconium mediated hydrogen outdiffusion from p-GaN. / Kaminska, Eliana A. ; Piotrowska, Anna M. ; Barcz, Adam J. ; Jasinski, Jakub ; Zielinski, Michał ; Golaszewska, Krystyna ; Davis, Robert F. ; Goldys, Ewa M. ; Tomsia, Krystyna .

Materials Research Society Symposium - Proceedings. Vol. 595 Cambridge : Cambridge University Press (CUP), 2000. p. W1091-W1096.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Zirconium mediated hydrogen outdiffusion from p-GaN

AU - Kaminska, Eliana A.

AU - Piotrowska, Anna M.

AU - Barcz, Adam J.

AU - Jasinski, Jakub

AU - Zielinski, Michał

AU - Golaszewska, Krystyna

AU - Davis, Robert F.

AU - Goldys, Ewa M.

AU - Tomsia, Krystyna

PY - 2000

Y1 - 2000

N2 - We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at approx. 900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

AB - We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at approx. 900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

UR - http://www.scopus.com/inward/record.url?scp=0033705085&partnerID=8YFLogxK

M3 - Conference proceeding contribution

AN - SCOPUS:0033705085

VL - 595

SP - W1091-W1096

BT - Materials Research Society Symposium - Proceedings

PB - Cambridge University Press (CUP)

CY - Cambridge

ER -

Zirconium mediated hydrogen outdiffusion from p-GaN

Abstract

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