Zirconium mediated hydrogen outdiffusion from p-GaN

Eliana A. Kaminska, Anna M. Piotrowska, Adam J. Barcz, Jakub Jasinski, Michał Zielinski, Krystyna Golaszewska, Robert F. Davis, Ewa M. Goldys, Krystyna Tomsia

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at approx. 900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
Place of PublicationCambridge
PublisherCambridge University Press
PagesW1091-W1096
Number of pages6
Volume595
Publication statusPublished - 2000
Externally publishedYes

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