Zirconium mediated hydrogen outdiffusion from p-GaN

Eliana A.  Kaminska; Anna M.  Piotrowska; Adam J.  Barcz; Jakub  Jasinski; Michał  Zielinski; Krystyna  Golaszewska; Robert F.  Davis; Ewa M.  Goldys; Krystyna  Tomsia

Zirconium mediated hydrogen outdiffusion from p-GaN

Eliana A. Kaminska, Anna M. Piotrowska, Adam J. Barcz, Jakub Jasinski, Michał Zielinski, Krystyna Golaszewska, Robert F. Davis, Ewa M. Goldys, Krystyna Tomsia

Research output: Contribution to journal › Article › peer-review

Abstract

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB₂ metallization is associated to the micro structure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

Original language	English
Pages (from-to)	U491-U496
Number of pages	6
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	5
Issue number	SUPPL. 1
Publication status	Published - 2000
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'; Boston, MA, USA; ; 28 November 1999 through 3 December 1999; Code 57103 - Boston, MA, USA, Boston, United States Duration: 28 Nov 1999 → 3 Dec 1999

Cite this

@article{22043ba9a37148b8a90a1667233418a5,

title = "Zirconium mediated hydrogen outdiffusion from p-GaN",

abstract = "We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the micro structure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.",

author = "Kaminska, {Eliana A.} and Piotrowska, {Anna M.} and Barcz, {Adam J.} and Jakub Jasinski and Micha{\l} Zielinski and Krystyna Golaszewska and Davis, {Robert F.} and Goldys, {Ewa M.} and Krystyna Tomsia",

year = "2000",

language = "English",

volume = "5",

pages = "U491--U496",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

publisher = "Materials Research Society",

number = "SUPPL. 1",

note = "The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'; Boston, MA, USA; ; 28 November 1999 through 3 December 1999; Code 57103 ; Conference date: 28-11-1999 Through 03-12-1999",

}

TY - JOUR

T1 - Zirconium mediated hydrogen outdiffusion from p-GaN

AU - Kaminska, Eliana A.

AU - Piotrowska, Anna M.

AU - Barcz, Adam J.

AU - Jasinski, Jakub

AU - Zielinski, Michał

AU - Golaszewska, Krystyna

AU - Davis, Robert F.

AU - Goldys, Ewa M.

AU - Tomsia, Krystyna

PY - 2000

Y1 - 2000

N2 - We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the micro structure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

AB - We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the micro structure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

UR - http://www.scopus.com/inward/record.url?scp=3242793352&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:3242793352

SN - 1092-5783

VL - 5

SP - U491-U496

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

IS - SUPPL. 1

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'; Boston, MA, USA; ; 28 November 1999 through 3 December 1999; Code 57103

Y2 - 28 November 1999 through 3 December 1999

ER -

Zirconium mediated hydrogen outdiffusion from p-GaN

Abstract

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Zirconium mediated hydrogen outdiffusion from p-GaN

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