Zirconium mediated hydrogen outdiffusion from p-GaN

Eliana A. Kaminska, Anna M. Piotrowska, Adam J. Barcz, Jakub Jasinski, Michał Zielinski, Krystyna Golaszewska, Robert F. Davis, Ewa M. Goldys, Krystyna Tomsia

Research output: Contribution to journalArticle

Abstract

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the micro structure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

Original languageEnglish
Pages (from-to)U491-U496
Number of pages6
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
Publication statusPublished - 2000
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'; Boston, MA, USA; ; 28 November 1999 through 3 December 1999; Code 57103 - Boston, MA, USA, Boston, United States
Duration: 28 Nov 19993 Dec 1999

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