We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the micro structure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.
|Number of pages||6|
|Journal||MRS Internet Journal of Nitride Semiconductor Research|
|Issue number||SUPPL. 1|
|Publication status||Published - 2000|
|Event||The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'; Boston, MA, USA; ; 28 November 1999 through 3 December 1999; Code 57103 - Boston, MA, USA, Boston, United States|
Duration: 28 Nov 1999 → 3 Dec 1999