ZnO as a novel photonic material for the UV region

Yefan Chen, Darren Bagnall, Takafumi Yao*

*Corresponding author for this work

Research output: Contribution to journalConference paperpeer-review

447 Citations (Scopus)


This paper will address the feasibility of ZnO as photonic material for the UV region. ZnO films are grown by plasma-assisted MBE. Detailed XRD studies suggest the growth of structurally different epilayers on Al2O3 (0001) and MgAl2O4 (111) substrates. PL shows dominant excitonic emission and very low deep level emission which is indicative of low density of defects or impurities. Stimulated emission based on the excitonic mechanism has been achieved up to 550 K. It is concluded that ZnO can be used for exciton-based photonic device applications owing to the high exciton binding energy. Optically pumped lasing has been demonstrated at room temperature.

Original languageEnglish
Pages (from-to)190-198
Number of pages9
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number2-3
Publication statusPublished - 1 Jun 2000
Externally publishedYes
EventThe IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors - Beijing, China
Duration: 13 Jun 199918 Jun 1999


  • ZnO films
  • XRD
  • Plasma-assisted MBE
  • Photonic material
  • Optically pumped lasing


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