ZnO as a novel photonic material for the UV region

Yefan Chen; Darren Bagnall; Takafumi Yao

doi:10.1016/S0921-5107(00)00372-X

ZnO as a novel photonic material for the UV region

Yefan Chen, Darren Bagnall, Takafumi Yao^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference paper › peer-review

451 Citations (Scopus)

Abstract

This paper will address the feasibility of ZnO as photonic material for the UV region. ZnO films are grown by plasma-assisted MBE. Detailed XRD studies suggest the growth of structurally different epilayers on Al₂O₃ (0001) and MgAl₂O₄ (111) substrates. PL shows dominant excitonic emission and very low deep level emission which is indicative of low density of defects or impurities. Stimulated emission based on the excitonic mechanism has been achieved up to 550 K. It is concluded that ZnO can be used for exciton-based photonic device applications owing to the high exciton binding energy. Optically pumped lasing has been demonstrated at room temperature.

Original language	English
Pages (from-to)	190-198
Number of pages	9
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	75
Issue number	2-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00372-X
Publication status	Published - 1 Jun 2000
Externally published	Yes
Event	The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors - Beijing, China Duration: 13 Jun 1999 → 18 Jun 1999

Keywords

ZnO films
XRD
Plasma-assisted MBE
Photonic material
Optically pumped lasing

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10.1016/S0921-5107(00)00372-X

Cite this

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abstract = "This paper will address the feasibility of ZnO as photonic material for the UV region. ZnO films are grown by plasma-assisted MBE. Detailed XRD studies suggest the growth of structurally different epilayers on Al2O3 (0001) and MgAl2O4 (111) substrates. PL shows dominant excitonic emission and very low deep level emission which is indicative of low density of defects or impurities. Stimulated emission based on the excitonic mechanism has been achieved up to 550 K. It is concluded that ZnO can be used for exciton-based photonic device applications owing to the high exciton binding energy. Optically pumped lasing has been demonstrated at room temperature.",

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T1 - ZnO as a novel photonic material for the UV region

AU - Chen, Yefan

AU - Bagnall, Darren

AU - Yao, Takafumi

PY - 2000/6/1

Y1 - 2000/6/1

N2 - This paper will address the feasibility of ZnO as photonic material for the UV region. ZnO films are grown by plasma-assisted MBE. Detailed XRD studies suggest the growth of structurally different epilayers on Al2O3 (0001) and MgAl2O4 (111) substrates. PL shows dominant excitonic emission and very low deep level emission which is indicative of low density of defects or impurities. Stimulated emission based on the excitonic mechanism has been achieved up to 550 K. It is concluded that ZnO can be used for exciton-based photonic device applications owing to the high exciton binding energy. Optically pumped lasing has been demonstrated at room temperature.

AB - This paper will address the feasibility of ZnO as photonic material for the UV region. ZnO films are grown by plasma-assisted MBE. Detailed XRD studies suggest the growth of structurally different epilayers on Al2O3 (0001) and MgAl2O4 (111) substrates. PL shows dominant excitonic emission and very low deep level emission which is indicative of low density of defects or impurities. Stimulated emission based on the excitonic mechanism has been achieved up to 550 K. It is concluded that ZnO can be used for exciton-based photonic device applications owing to the high exciton binding energy. Optically pumped lasing has been demonstrated at room temperature.

KW - ZnO films

KW - XRD

KW - Plasma-assisted MBE

KW - Photonic material

KW - Optically pumped lasing

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DO - 10.1016/S0921-5107(00)00372-X

M3 - Conference paper

AN - SCOPUS:21244489354

SN - 0921-5107

VL - 75

SP - 190

EP - 198

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 2-3

T2 - The IUMRS International Conference on Advanced Materials 1999, Symposium N: Compound Semiconductors

Y2 - 13 June 1999 through 18 June 1999

ER -

ZnO as a novel photonic material for the UV region

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Keywords

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