ZnO quantum pyramids grown on c-plane sapphire by plasma-assisted molecular beam epitaxy

Yefan Chen*, Ziqiang Zhu, D. M. Bagnall, Takashi Sekiuchi, Takafumi Yao

*Corresponding author for this work

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

ZnO quantum disks are found to form on the top surface of a thick ZnO epilayer as a result of a morphology transition occurring during the growth of ZnO single-crystal thin films on c-plane sapphire using plasma-assisted molecular beam epitaxy. These disks manifest themselves as triangular pyramids and organize themselves to conform to the six-fold symmetry of the ZnO epilayer underneath with the base edges along <1100> and side facets of {1 2 1 6}. Atomic-force microscopy measurements show a size distribution with base width centered at 140 and 24 nm height, the height/width ratio remaining constant due to the formation of special facets. Cathodoluminescence studies reveal a strong near-bandgap emission from the regions with a high density of pyramids.

Original languageEnglish
Pages (from-to)269-273
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 2 Feb 1998
Externally publishedYes

Keywords

  • growth
  • MBE
  • morphology
  • pyramid
  • sapphire
  • ZnO

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