ZnO/AlGaN ultraviolet light emitting diodes

D. M. Bagnall*, Ya I. Alivov, E. V. Kalinina, D. C. Look, B. M. Ataev, M. V. Chukichev, A. E. Cherenkov, A. K. Omaev

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Ga doped n-type ZnO layers are grown using plasma assisted chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers grown by hydride vapor phase epitaxy to form n-ZnO/p-AlGaN heterojunction light emitting diodes. I-V characteristics clearly show rectifying behavior with a threshold voltage of ∼3.2 V and intense ultraviolet electroluminescence with peak emission at 390 nm. The dominant emission mechanism is found to result from hole injection from the p-type AlGaN into the n-type ZnO. Significant emission up to 500 K is observed indicating possible applications in harsh environments.

Original languageEnglish
Article numberY3.9
Pages (from-to)41-46
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2003
Externally publishedYes


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