ZnO/AlGaN ultraviolet light emitting diodes

D. M. Bagnall; Ya I. Alivov; E. V. Kalinina; D. C. Look; B. M. Ataev; M. V. Chukichev; A. E. Cherenkov; A. K. Omaev

doi:10.1557/PROC-798-Y3.9

ZnO/AlGaN ultraviolet light emitting diodes

D. M. Bagnall^*, Ya I. Alivov, E. V. Kalinina, D. C. Look, B. M. Ataev, M. V. Chukichev, A. E. Cherenkov, A. K. Omaev

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Ga doped n-type ZnO layers are grown using plasma assisted chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers grown by hydride vapor phase epitaxy to form n-ZnO/p-AlGaN heterojunction light emitting diodes. I-V characteristics clearly show rectifying behavior with a threshold voltage of ∼3.2 V and intense ultraviolet electroluminescence with peak emission at 390 nm. The dominant emission mechanism is found to result from hole injection from the p-type AlGaN into the n-type ZnO. Significant emission up to 500 K is observed indicating possible applications in harsh environments.

Original language	English
Article number	Y3.9
Pages (from-to)	41-46
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	798
DOIs	https://doi.org/10.1557/PROC-798-Y3.9
Publication status	Published - 2003
Externally published	Yes

Access to Document

10.1557/PROC-798-Y3.9

Cite this

@article{efd491bf6bc947f4ab0d351cf4854bc2,

title = "ZnO/AlGaN ultraviolet light emitting diodes",

abstract = "Ga doped n-type ZnO layers are grown using plasma assisted chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers grown by hydride vapor phase epitaxy to form n-ZnO/p-AlGaN heterojunction light emitting diodes. I-V characteristics clearly show rectifying behavior with a threshold voltage of ∼3.2 V and intense ultraviolet electroluminescence with peak emission at 390 nm. The dominant emission mechanism is found to result from hole injection from the p-type AlGaN into the n-type ZnO. Significant emission up to 500 K is observed indicating possible applications in harsh environments.",

author = "Bagnall, {D. M.} and Alivov, {Ya I.} and Kalinina, {E. V.} and Look, {D. C.} and Ataev, {B. M.} and Chukichev, {M. V.} and Cherenkov, {A. E.} and Omaev, {A. K.}",

year = "2003",

doi = "10.1557/PROC-798-Y3.9",

language = "English",

volume = "798",

pages = "41--46",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - ZnO/AlGaN ultraviolet light emitting diodes

AU - Bagnall, D. M.

AU - Alivov, Ya I.

AU - Kalinina, E. V.

AU - Look, D. C.

AU - Ataev, B. M.

AU - Chukichev, M. V.

AU - Cherenkov, A. E.

AU - Omaev, A. K.

PY - 2003

Y1 - 2003

N2 - Ga doped n-type ZnO layers are grown using plasma assisted chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers grown by hydride vapor phase epitaxy to form n-ZnO/p-AlGaN heterojunction light emitting diodes. I-V characteristics clearly show rectifying behavior with a threshold voltage of ∼3.2 V and intense ultraviolet electroluminescence with peak emission at 390 nm. The dominant emission mechanism is found to result from hole injection from the p-type AlGaN into the n-type ZnO. Significant emission up to 500 K is observed indicating possible applications in harsh environments.

AB - Ga doped n-type ZnO layers are grown using plasma assisted chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers grown by hydride vapor phase epitaxy to form n-ZnO/p-AlGaN heterojunction light emitting diodes. I-V characteristics clearly show rectifying behavior with a threshold voltage of ∼3.2 V and intense ultraviolet electroluminescence with peak emission at 390 nm. The dominant emission mechanism is found to result from hole injection from the p-type AlGaN into the n-type ZnO. Significant emission up to 500 K is observed indicating possible applications in harsh environments.

UR - http://www.scopus.com/inward/record.url?scp=2942694158&partnerID=8YFLogxK

U2 - 10.1557/PROC-798-Y3.9

DO - 10.1557/PROC-798-Y3.9

M3 - Article

AN - SCOPUS:2942694158

SN - 0272-9172

VL - 798

SP - 41

EP - 46

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

M1 - Y3.9

ER -

ZnO/AlGaN ultraviolet light emitting diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this