ZnSe heteroepitaxy on GaAs (110) substrate

M. W. Cho; K. W. Koh; D. M. Bagnall; Z. Zhu; T. Yao

doi:10.1007/s11664-998-0194-0

ZnSe heteroepitaxy on GaAs (110) substrate

M. W. Cho^*, K. W. Koh, D. M. Bagnall, Z. Zhu, T. Yao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

ZnSe heteroepitaxial layers have been grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates by molecular beam epitaxy. ZnSe on GaAs (110) shows smooth and featureless spectra from Rutherford backscattering channeling measurements taken along major crystalline directions, whereas ZnSe on GaAs (100) without pro-growth treatments exhibit large interface disorder in channeling spectra. ZnSe films grown on GaAs (110) on axis show facet formation over a wide range of growth conditions. The use of(110) 6° miscut substrates is shown to suppress facet formation; and under the correct growth conditions, facet-free surfaces are achieved. Etch pit density measurements give dislocation densities for ZnSe epitaxial layers grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates of 10⁷/cm², 3 × 10⁵/cm² and 5 × 10⁴/cm², respectively. These results suggest that with further improvements to ZnSe growth on GaAs (110)-off substrates it may be possible to fabricate defect free ZnSe based laser devices.

Original language	English
Pages (from-to)	85-88
Number of pages	4
Journal	Journal of Electronic Materials
Volume	27
Issue number	2
DOIs	https://doi.org/10.1007/s11664-998-0194-0
Publication status	Published - Feb 1998
Externally published	Yes

Keywords

etch pit density (EPD)
GaAs (110)
molecular beam epitaxy (MBE)
ZnSe

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10.1007/s11664-998-0194-0

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title = "ZnSe heteroepitaxy on GaAs (110) substrate",

abstract = "ZnSe heteroepitaxial layers have been grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates by molecular beam epitaxy. ZnSe on GaAs (110) shows smooth and featureless spectra from Rutherford backscattering channeling measurements taken along major crystalline directions, whereas ZnSe on GaAs (100) without pro-growth treatments exhibit large interface disorder in channeling spectra. ZnSe films grown on GaAs (110) on axis show facet formation over a wide range of growth conditions. The use of(110) 6° miscut substrates is shown to suppress facet formation; and under the correct growth conditions, facet-free surfaces are achieved. Etch pit density measurements give dislocation densities for ZnSe epitaxial layers grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates of 107/cm2, 3 × 105/cm2 and 5 × 104/cm2, respectively. These results suggest that with further improvements to ZnSe growth on GaAs (110)-off substrates it may be possible to fabricate defect free ZnSe based laser devices.",

keywords = "etch pit density (EPD), GaAs (110), molecular beam epitaxy (MBE), ZnSe",

author = "Cho, {M. W.} and Koh, {K. W.} and Bagnall, {D. M.} and Z. Zhu and T. Yao",

year = "1998",

month = feb,

doi = "10.1007/s11664-998-0194-0",

language = "English",

volume = "27",

pages = "85--88",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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TY - JOUR

T1 - ZnSe heteroepitaxy on GaAs (110) substrate

AU - Cho, M. W.

AU - Koh, K. W.

AU - Bagnall, D. M.

AU - Zhu, Z.

AU - Yao, T.

PY - 1998/2

Y1 - 1998/2

N2 - ZnSe heteroepitaxial layers have been grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates by molecular beam epitaxy. ZnSe on GaAs (110) shows smooth and featureless spectra from Rutherford backscattering channeling measurements taken along major crystalline directions, whereas ZnSe on GaAs (100) without pro-growth treatments exhibit large interface disorder in channeling spectra. ZnSe films grown on GaAs (110) on axis show facet formation over a wide range of growth conditions. The use of(110) 6° miscut substrates is shown to suppress facet formation; and under the correct growth conditions, facet-free surfaces are achieved. Etch pit density measurements give dislocation densities for ZnSe epitaxial layers grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates of 107/cm2, 3 × 105/cm2 and 5 × 104/cm2, respectively. These results suggest that with further improvements to ZnSe growth on GaAs (110)-off substrates it may be possible to fabricate defect free ZnSe based laser devices.

AB - ZnSe heteroepitaxial layers have been grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates by molecular beam epitaxy. ZnSe on GaAs (110) shows smooth and featureless spectra from Rutherford backscattering channeling measurements taken along major crystalline directions, whereas ZnSe on GaAs (100) without pro-growth treatments exhibit large interface disorder in channeling spectra. ZnSe films grown on GaAs (110) on axis show facet formation over a wide range of growth conditions. The use of(110) 6° miscut substrates is shown to suppress facet formation; and under the correct growth conditions, facet-free surfaces are achieved. Etch pit density measurements give dislocation densities for ZnSe epitaxial layers grown on GaAs (100), (110) on axis, and (110) 6° miscut substrates of 107/cm2, 3 × 105/cm2 and 5 × 104/cm2, respectively. These results suggest that with further improvements to ZnSe growth on GaAs (110)-off substrates it may be possible to fabricate defect free ZnSe based laser devices.

KW - etch pit density (EPD)

KW - GaAs (110)

KW - molecular beam epitaxy (MBE)

KW - ZnSe

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U2 - 10.1007/s11664-998-0194-0

DO - 10.1007/s11664-998-0194-0

M3 - Article

AN - SCOPUS:0031996833

VL - 27

SP - 85

EP - 88

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 2

ER -

ZnSe heteroepitaxy on GaAs (110) substrate

Abstract

Keywords

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